Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition

• US 8,084,104 B2
• Filed: 08/29/2008
• Issued: 12/27/2011
• Est. Priority Date: 08/29/2008
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Shinriki, Hiroshi, Jeong, Daekyun, Namba, Kunitoshi
• Primary Examiner(s): Meeks, Timothy
• Assistant Examiner(s): MILLER, JR, JOSEPH ALBERT
• Application Number:
  US12/201,434
• Publication Number:
  US 20100055433A1
• Time in Patent Office: 1,215 Days
• Field of Search: None
• US Class Current: 427/569
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/4554 Plasma being used non-continuously in between ALD reactions C23C16/56 takes precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as Ru_(x1)Ta/Ti_(y1)N_(z1) wherein an atomic ratio of Ru_(x1)/(Ta/Ti_(y1)) is no less than 15, and z1 is 0.05 or less. The atomic composition of Ru, Ta or Ti, and N in the bottom section is represented as Ru_(x2)Ta/Ti_(y2)N_(z2) wherein an atomic ratio of Ru_(x2)/(Ta/Ti_(y2)) is more than zero but less than 15, and z2 is 0.10 or greater.

Claims

1. A method of forming a metal film on a substrate, comprising:

(i) placing a substrate in a reaction space;

(ii) conducting atomic layer deposition of Ta or Ti X times, each atomic layer deposition of Ta or Ti being accomplished by introducing a Ta or Ti source gas containing N into the reaction space and applying a reducing gas plasma to the reaction space;

(iii) after step (ii), conducting atomic layer deposition of Ru Y times, each atomic layer deposition of Ru being accomplished by introducing a Ru source gas into the reaction space and applying a reducing gas plasma in the reaction space;

(iva) repeating steps (ii) and (iii) Z1 times wherein a ratio of Y/X defined as a first ratio is 1 to 3, and Z1 is 10 to 100, thereby forming a first section of a metal film on the substrate; and

then

(ivb) repeating steps (ii) and (iii) Z2 times using a second ratio of Y/X which is greater than the first ratio wherein Z2 is 10 to 100, thereby forming a second section of the metal film, wherein a proportion of a hydrogen gas plasma in the reducing gas plasma within step (iii) in step (ivb) is higher than that in step (iva), thereby reducing an atomic proportion of N in the second section of the metal film as compared with the first section of the metal film,

further comprising, between steps (iva) and (ivb), (ivc) repeating steps (ii) and (iii) Z3 times using a third ratio of Y/X which is smaller than the first and second ratios wherein Z3 is 10 to 100, thereby forming an intermediate section of the metal film,

wherein the reducing gas plasma in step (iii) in steps (iva) and (ivc) is generated from a reducing gas including both nitrogen and hydrogen, and the reducing gas plasma in step (iii) in step (ivb) is generated from H2 gas.

2. The method according to claim 1, wherein the reducing gas plasma in step (ii) is generated from a reducing gas including nitrogen.

3. The method according to claim 1, wherein the reducing gas plasma in step (iii) in step (iva) is generated from a reducing gas including both nitrogen and hydrogen, and as the step of changing the proportion of the hydrogen gas plasma, the reducing gas plasma in step (iii) in step (ivb) is generated solely from H₂ gas.

4. The method according to claim 1, wherein the Ta or Ti source gas is an organic Ta source gas selected from the group consisting of TAIMATA (Tertiaryamylimidotris(dimethylamido)tantalum), TBTDET (Ta(N-i-C₄H₉)[N(C₂H₅)₂]₃), and PDMAT (Ta[N(CH₃)₂]₅).

5. The method according to claim 1, wherein the Ru source gas is a β

-diketone-coordinated ruthenium compound.

6. The method according to claim 1, wherein the Ru source gas is a Ru complex having a structure of Xa-Ru—

Xb wherein Xa is a non-cyclic pentadienyl and Xb is a cyclopentadienyl.

7. The method according to claim 1, wherein the substrate is a copper wiring substrate having trenches.

8. The method according to claim 1, wherein in step (iva), X is 1 and Y is 1 to 3, and in step (ivb), Xis 0 or 1 and Y is 1 to 5 if X=1.

9. The method according to claim 1, wherein in step (iva), X is 1 and Y is 1 to 3;

in step (ivc), X is 1 and Y is 0 or 1, and in step (ivb), Xis 0 or 1, and Y is 3 to 5 if X=1.

10. The method according to claim 1, wherein

the atomic composition of Ru, Ta or Ti, and N in the second section is represented as Ru_(x1)Ta/Ti_(y1)N_(z1) wherein an atomic ratio of Ru_(x1)/(Ta/Ti_(y1) is no less than 15, and z1 is 0.05 or less, and

the atomic composition of Ru, Ta or Ti, and N in the first section is represented as Ru_(x2)Ta/Ti_(y2)N_(z2) wherein an atomic ratio of Ru_(x2)/(Ta/Ti_(y2)) is more than zero but less than 15, and z2 is 0.10 or greater.

11. The method according to claim 10, wherein 0.75≦

x1≦

1, 0≦

y1≦

0.05, 0≦

z1≦

0.05, 0.02≦

x2≦

0.75, 0.05≦

y2≦

0.70, and 0.10≦

z2≦

0.25.

12. The method according to claim 1, wherein

the atomic composition of Ru, Ta or Ti, and N in the second section is represented as Ru_(x1)Ta/Ti_(y1)N_(z1) wherein an atomic ratio of Ru_(x1)/(Ta/Ti_(y1)) is no less than 15, and z1 is 0.05 or less,

the atomic composition of Ru, Ta or Ti, and N in the first section is represented as Ru_(x2)Ta/Ti_(y2)N_(z2) wherein an atomic ratio of Ru_(x2)Ta/Ti_(y2)) is more than zero but less than 15, and z2 is 0.10 or greater, and

the atomic composition of Ru, Ta or Ti, and N in the intermediate section is represented as Ru_(x3)Ta/Ti_(y3)N_(z3) wherein an atomic ratio of Ru_(x3)Ta/Ti_(y3)) is less than one.

13. The metal film according to claim 12, wherein 0.75≦

x1≦

1, 0≦

y1≦

0.05, 0≦

z1≦

0.05, 0.02≦

x2≦

0.75, 0.05≦

y2≦

0.70, 0.10≦

z2≦

0.25, 0≦

x3≦

0.40, 0.40≦

y3≦

0.90, and 0.10≦

z3≦

0.25.

14. The method according to claim 1, wherein the second section and the first section have a thickness of 1 to 3 nm.

15. The method according to claim 1, wherein the second section, the intermediate section, and the first section have a thickness of 0.5 to 3 nm, 1 to 3 nm, and 0.5 to 3 nm, respectively.