Method for manufacturing thin film transistor
First Claim
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1. A method for manufacturing a thin film transistor including a channel layer that includes indium oxide, the method comprising:
- forming an indium oxide film for the channel layer; and
annealing the indium oxide film in an oxidizing atmosphere at a temperature in a range of 150°
C. to 450°
C.,wherein the indium oxide film is amorphous prior to the annealing and is crystalline after the annealing,wherein the indium oxide film is formed by sputtering under a gas pressure of 6.5 Pa or less and an oxygen partial pressure of 1 Pa or less during deposition, andwherein the crystalline indium oxide film after the annealing step has a surface roughness having a root mean square of 1 nm or less.
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Abstract
A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.
60 Citations
4 Claims
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1. A method for manufacturing a thin film transistor including a channel layer that includes indium oxide, the method comprising:
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forming an indium oxide film for the channel layer; and annealing the indium oxide film in an oxidizing atmosphere at a temperature in a range of 150°
C. to 450°
C.,wherein the indium oxide film is amorphous prior to the annealing and is crystalline after the annealing, wherein the indium oxide film is formed by sputtering under a gas pressure of 6.5 Pa or less and an oxygen partial pressure of 1 Pa or less during deposition, and wherein the crystalline indium oxide film after the annealing step has a surface roughness having a root mean square of 1 nm or less. - View Dependent Claims (2, 3, 4)
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsItagaki, Naho, Iwasaki, Tatsuya, Den, Toru
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Primary Examiner(s)SARKAR, ASOK K
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Application NumberUS12/447,199Publication NumberTime in Patent Office1,509 DaysField of Search257/E21.051, 257/E21.37, 257/E21.4, 257/E21.654, 438/149, 438/609US Class Current438/149CPC Class CodesH01L 29/7869 having a semiconductor body...
