Semiconductor device and method for fabricating the same
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:
- forming a recess pattern in a substrate;
forming a gate dielectric layer over the recess pattern;
forming a gate electrode over the gate dielectric layer inside the recess pattern, wherein the gate electrode does not extend above a surface of the substrate;
forming a gate hard mask pattern over the gate electrode and upper corners of the recess pattern;
forming a barrier layer over the gate hard mask pattern;
forming an interlayer dielectric layer over the barrier layer;
forming a contact hole by performing a self aligned contact (SAC) etching by using an etch selectivity between the interlayer dielectric layer and the barrier layer, wherein the substrate between the gate hard mask pattern and an adjacent gate hard mask pattern is recessed to a predetermined depth; and
forming a plug over the substrate between the gate hard mask pattern and the adjacent gate hard mask pattern by filling the contact hole.
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Abstract
A semiconductor device can prevent exposure of an inner wall of a recess pattern caused by misalignment between masks. A gate electrode is formed inside the recess pattern so that only a gate hard mask layer is exposed above a substrate surface. Since the gate electrode is not exposed above the substrate, it is possible to prevent SAC failure and decrease an aspect ratio of a gate pattern to increase an open margin of a contact hole. Thus, a semiconductor device having a recess channel gate structure which exhibits a superior refresh property is fabricated.
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17 Claims
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1. A method for fabricating a semiconductor device, the method comprising:
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forming a recess pattern in a substrate; forming a gate dielectric layer over the recess pattern; forming a gate electrode over the gate dielectric layer inside the recess pattern, wherein the gate electrode does not extend above a surface of the substrate; forming a gate hard mask pattern over the gate electrode and upper corners of the recess pattern; forming a barrier layer over the gate hard mask pattern; forming an interlayer dielectric layer over the barrier layer; forming a contact hole by performing a self aligned contact (SAC) etching by using an etch selectivity between the interlayer dielectric layer and the barrier layer, wherein the substrate between the gate hard mask pattern and an adjacent gate hard mask pattern is recessed to a predetermined depth; and forming a plug over the substrate between the gate hard mask pattern and the adjacent gate hard mask pattern by filling the contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification