Ring-shaped electrode and manufacturing method for same

• US 8,084,760 B2
• Filed: 04/20/2009
• Issued: 12/27/2011
• Est. Priority Date: 04/20/2009
• Status: Active Grant

• Current Assignee: International Business Machines Corporation, Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Lung, Hsiang-Lan, Chen, Shih-Hung, Rossnagel, Stephen M.
• Primary Examiner(s): Valentine, Jami M
• Application Number:
  US12/426,809
• Publication Number:
  US 20100264396A1
• Time in Patent Office: 981 Days
• Field of Search: 257 2- 5, 257/E29.002, 438102-103, 365/163
• US Class Current: 257/2
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: H10B 63/30 comprising selection components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 70/011 Manufacture or treatment of multistable switching devices
• CPC Class Codes: H10N 70/026 by physical vapor deposition, e.g. sputtering
• CPC Class Codes: H10N 70/041 Modification of the switching material, e.g. post-treatment, doping
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/245 the species being metal cations, e.g. programmable metallization cells
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8418 adapted for focusing electric field or current, e.g. tip-shaped
• CPC Class Codes: H10N 70/8822 Sulfides, e.g. CuS
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe
• CPC Class Codes: H10N 70/8833 Binary metal oxides, e.g. TaOx

Abstract

An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as n-doped silicon, and having a ring-shaped top surface. A disc-shaped insulating member is formed on the top of the pipe-shaped member by oxidizing the conductive fill. A layer of programmable resistance material, such as a phase change material, is deposited in contact with the top surface of the pipe-shaped member. A top electrode in contact with the layer of programmable resistance material.

Claims

1. An integrated circuit device, comprising:

an electrode comprising a pipe-shaped member of an electrode material having a first end, a second end and a ring-shaped surface at the second end, wherein the pipe-shaped member has an inside surface and an outside surface;

a first layer of conducting fill material inside the inside surface of the pipe-shaped member characterized by being electrically conductive; and

a second layer of insulating fill material over the first and extending to the second end of the pipe-shaped member, wherein the insulating fill material is characterized by being an oxide or nitride of the conducting fill material; and

wherein the pipe-shaped member has a thickness between the inside surface and the outside surface less than 30 nm.

2. The device of claim 1, wherein the conducting fill material comprises silicon.

3. The device of claim 1, wherein the conducting fill material comprises n-type silicon.

4. The device of claim 1, including a disc-shaped member of an electrode material adjacent the first end of the pipe-shaped member.

5. An integrated circuit device, comprising:

an electrode com risin a pipe-shaped member of an electrode material having a first end, a second end and a ring-shaped surface at the second end, wherein the pipe-shaped member has an inside surface and an outside surface;

a first layer of conducting fill material inside the inside surface of the pipe-shaped member characterized by being electrically conductive; and

a second layer of insulating fill material over the first and extending to the second end of the pipe-shaped member;

a layer of programmable resistance material in contact with the ring-shaped surface of the pipe-shaped member; and

a second electrode in contact with the layer of programmable resistance material; and

wherein the pipe-shaped member has a thickness between the inside surface and the outside surface less than 30 nm.

6. The device of claim 5, wherein the insulating fill material is characterized by being an oxide or nitride of the conducting fill material.

7. The device of claim 5, wherein the programmable resistance material comprises a phase change material.

8. A method for manufacturing an electrode in an integrated circuit device, comprising:

forming an electrode comprising a pipe-shaped member having a first end, a second end, and a ring-shaped surface at the second end, wherein the pipe-shaped member has an inside surface and an outside surface;

forming a first layer of conducting fill material inside the inside surface of the pipe-shaped member;

forming a second layer of insulating fill material inside the inside surface of the pipe-shaped member over the first layer and extending to the second end of the pipe-shaped member;

forming a layer of programmable resistance material in contact with the ring-shaped surface of the pipe-shaped member; and

forming a second electrode in contact with the layer of programmable resistance material; and

wherein the pipe-shaped member has a thickness between the inside surface and the outside surface less than 30 nm.

9. The method of claim 8, wherein said conducting fill material has higher rate of oxidation or nitridation than the ring-shape surface of the pipe shaped member.

10. The method of claim 8, wherein said forming a second layer of insulating fill material includes at least one of oxidizing and nitridizing the conducting fill material.

11. The method of claim 8, wherein the conducting fill material comprises silicon, and said forming a second layer includes at least one of oxidizing and nitridizing said silicon.

12. The method of claim 8, wherein the programmable resistance material comprises a phase change material.

13. The method of claim 8, wherein

said forming a first layer of conducting fill material includes forming a structure having a top surface of the first layer of conducting fill material flush with a top surface of the pipe-shaped member, and etching the conducting fill material to form a recess inside the pipe-shaped member;

and

said forming a second layer of insulating fill material includes filling said recess with said insulating fill material and planarizing the resulting structure to expose said ring-shaped surface.