Shunt regulator

• US 8,085,006 B2
• Filed: 02/16/2007
• Issued: 12/27/2011
• Est. Priority Date: 02/17/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: da Fonte Dias, Victor, Burger-Riccio, Roberta
• Primary Examiner(s): Berhane, Adolf
• Assistant Examiner(s): Mehari, Yemane
• Application Number:
  US11/707,562
• Publication Number:
  US 20070200536A1
• Time in Patent Office: 1,775 Days
• Field of Search: 323/220, 323/223, 323/224, 323/225, 323/228, 323/312, 323/272
• US Class Current: 323/223
• CPC Class Codes: G05F 1/613 using semiconductor devices in parallel with the load as final control devices G05F1/461 takes precedence

Abstract

A shunt regulator for stepping down an input potential to an output potential, has an input for applying the input potential, an output for tapping off the output potential and a voltage drop circuit, across which the voltage difference between the input potential and the output potential drops. It is possible for the current flowing through the voltage drop circuit or its lower and/or upper limit value to be adjusted.

Claims

1. A shunt regulator for stepping down an input potential to an output potential, the shunt regulator comprising:

an input terminal for applying the input potential between the input terminal and a common fixed potential;

an output terminal for tapping off the output potential between the output terminal and the common fixed potential, the output potential being regulated; and

a voltage drop circuit comprising

at least one transistor having a load path,

at least one nonreactive resistor coupled into a current path of the voltage drop circuit, the at least one nonreactive resistor having an adjustable resistance value, wherein

the voltage drop circuit is coupled in series between the input terminal and the output terminal,

during operation of the shunt regulator, a voltage difference between the input potential and the output potential drops across the voltage drop circuit, and

a current flowing through the voltage drop circuit or a limit value of the current flowing through the voltage drop circuit is adjustable.

2. The shunt regulator according to claim 1, further comprising:

a control unit for causing the current flowing through the voltage drop circuit to be adjusted or for causing the limit value of the current flowing through the voltage drop circuit to be adjusted, the adjustments taking place as a function of the input potential and/or at least one predetermined value for the limit value.

3. The shunt regulator according to claim 1, wherein the at least one nonreactive resistor comprises at least one bridgeable resistor coupled into a current path of the voltage drop circuit.

4. The shunt regulator according to claim 1, wherein the common fixed potential comprises a ground potential.

5. The shunt regulator according to one claim 1, wherein the shunt regulator is integrated monolithically on a substrate.

6. The shunt regulator according to claim 1, further comprising:

a controllable component comprising a load path coupled between the output terminal and the common fixed potential; and

a control element configured to drive the controllable component such that a predetermined output potential is applied to the output terminal.

7. The shunt regulator according to claim 1, wherein the adjustable limit value of the current flowing through the voltage drop circuit comprises a lower and/or upper limit value.

8. The shunt regulator according to claim 2, wherein:

the load path is coupled into a current path of the voltage drop circuit; and

the at least one transistor comprises a control terminal driven by the control unit.

9. The shunt regulator according to claim 8, wherein the at least one transistor comprises at least one field effect transistor.

10. The shunt regulator according to claim 8, wherein the control unit is configured to:

compare the input potential or a potential derived from the input potential with a threshold value; and

drive the at least one transistor as a function of the comparison with the threshold value.

11. The shunt regulator of claim 9, wherein the field effect transistor is configured to be optionally operated in a triode region or in a saturation region.

12. The shunt regulator according to claim 9, further comprising a voltage divider that divides the input potential into at least one subpotential, wherein the control unit adjusts the current flowing through the voltage drop circuit or the limit value of the current flowing through the voltage drop circuit as a function of the, at least one subpotential.

13. The shunt regulator according to claim 12, wherein the control unit is configured to:

compare the at least one subpotential with a threshold value; and

drive the at least one transistor as a function of a comparison with the threshold value.

14. The shunt regulator according to claim 12, wherein the control unit is configured to increase a gate potential of the at least one field effect transistor as the input potential increases if the at least one field effect transistor is operated in the saturation region.

15. The shunt regulator according to claim 6, wherein the control element is configured to:

compare the output potential or a potential derived from the output potential with a reference potential; and

drive the controllable component as a function of a comparison with the reference potential.

16. The shunt regulator according to claim 6, wherein:

the controllable component comprises a field effect transistor; and

the control element comprises an operational amplifier, the operational amplifier comprising an output coupled to a gate of the field effect transistor.

17. A method of operating a shunt regulator comprising an input terminal, an output terminal, and a common terminal, the method comprising:

comparing a potential between the input terminal and the common terminal of the shunt regulator with a predetermined threshold;

adjusting a resistance of a voltage drop circuit based on comparing the potential at the input terminal, the voltage drop circuit coupled in series between the input terminal and the output terminal of the shunt regulator; and

regulating an output potential between the output terminal and the common terminal, regulating comprising controlling a shunt regulation transistor coupled in shunt with the output terminal, the controlling comprising comparing a potential at the output terminal with a reference voltage and adjusting a current through the shunt regulation transistor based on the comparing the potential at the output terminal.

18. The method of claim 17, wherein;

the voltage drop circuit comprises at least one MOS transistor and at least one resistor coupled in series; and

adjusting the resistance comprises adjusting a gate voltage of the at least one MOS transistor.

19. The method of claim 17, wherein:

comparing the potential at the input terminal comprises comparing the potential at the input terminal through a first voltage divider circuit; and

comparing the potential at the output terminal comprises comparing the potential at the output terminal through a second voltage divider circuit.

20. A semiconductor shunt regulator circuit comprising:

a voltage drop circuit coupled between an input terminal and an output terminal of the semiconductor shunt regulator circuit, the voltage drop circuit comprising

an adjustable resistor comprising at least one transistor and at least one resistor coupled in series,

a first voltage divider circuit coupled to the input terminal of the semiconductor shunt regulator circuit,

a control circuit configured to control the adjustable resistor based on an output of the first voltage divider circuit; and

a shunt regulation circuit configured to regulate an output potential between the output terminal and a common terminal, the shunt regulation circuit comprising

a shunt transistor comprising an output terminal coupled between the output terminal and the common terminal of the semiconductor shunt regulator circuit; and

an operational amplifier comprising

an output coupled to a control terminal of the shunt transistor,

a first input coupled to a second voltage divider circuit, wherein the second voltage divider circuit is further coupled to the output terminal of the semiconductor shunt regulator circuit, and

a second input coupled to a reference voltage.