Thin film transistor display panel and method of manufacturing the same

• US 8,085,366 B2
• Filed: 06/16/2009
• Issued: 12/27/2011
• Est. Priority Date: 11/28/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Chang, Sun-Young
• Primary Examiner(s): Qi, Mike
• Application Number:
  US12/485,748
• Publication Number:
  US 20100133538A1
• Time in Patent Office: 924 Days
• Field of Search: 349/106, 349/44, 349/108, 349/109
• US Class Current: 349/106
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133565 inside the LC elements, i.e. between the cell substrates
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence

Abstract

A thin film transistor array panel according to an exemplary embodiment includes a first colored member overlapping a thin film transistor and a plurality of second colored members simultaneously formed on the first colored member. Accordingly, it is possible to prevent light leakage current of the thin film transistor, to easily repair deterioration of the thin film transistor, to prevent light leakage of a peripheral area and between color filters, and to form stable patterns.

Claims

1. A thin film transistor array panel comprising:

a substrate;

a thin film transistor layer disposed on the substrate and comprising a thin film transistor;

a plurality of color filters disposed on the thin film transistor layer;

a first colored member disposed on the thin film transistor layer, the first colored member having a portion overlapping the thin film transistor; and

a second colored member disposed on the first colored member, the second colored member having a different optical density from the first colored member,

wherein the second colored member comprises a first portion overlapping at least one of the color filters, and

wherein the first colored member comprises a second portion overlapping the first portion.

2. The thin film transistor array panel of claim 1, wherein the first portion, the second portion, and the color filter overlapping the first portion comprise a portion of a column spacer.

3. The thin film transistor array panel of claim 2, wherein the thickness of the column spacer is in the range of 3.6-4.7 μ

m.

4. The thin film transistor array panel of claim 2, wherein the second colored member comprises a sixth portion overlapping at least one of the color filters, and wherein the first colored member comprises a seventh portion overlapping the sixth portion, and wherein the sixth portion is thinner than the first portion.

5. The thin film transistor array panel of claim 1, wherein the second colored member comprises a third portion covering a contact hole disposed in the peripheral area.

6. The thin film transistor array panel of claim 5, wherein the third portion and the first portion have substantially the same thickness.

7. The thin film transistor array panel of claim 1, wherein the second colored member comprises a fourth portion interposed between the plurality of color filters.

8. The thin film transistor array panel of claim 7, wherein the fourth portion has substantially the same thickness as the color filter.

9. The thin film transistor array panel of claim 1, wherein the second colored member comprises a fifth portion disposed on the region where the color filters are overlapped with each other.

10. The thin film transistor array panel of claim 9, wherein the fifth portion has substantially the same thickness as the first colored member.

11. The thin film transistor array panel of claim 1, wherein each of the color filters comprises an opening, and wherein an overlapping portion between the first colored member and the thin film transistor is disposed on the opening.

12. The thin film transistor array panel of claim 1, wherein the optical density of the second colored member is in the range of 1.6-2.5 per μ

m.

13. The thin film transistor array panel of claim 1, wherein the absorbance of the first colored member is in the range of 1.2-1.8.

14. The thin film transistor array panel of claim 1, wherein the thickness of the first colored member is in the range of 2.0-3.0 μ

m.

15. The thin film transistor array panel of claim 1, further comprising a pixel electrode disposed on the thin film transistor layer, wherein the second colored member is disposed on the pixel electrode.

16. A method for manufacturing a thin film transistor array panel comprising:

forming a thin film transistor layer including a thin film transistor on a substrate;

forming a plurality of color filters on the thin film transistor layer;

forming a first colored member having a portion overlapping the thin film transistor on the thin film transistor layer, and

forming a second colored member having a different optical density from the first colored member through a photo-process on the first colored member,

wherein the second colored member comprises a first portion overlapping at least one of the color filters, and

wherein the first colored member comprises a second portion overlapping the first portion.

17. The method of claim 16, wherein the first portion, the second portion, and the color filter overlapping the first portion compose a portion of a column spacer.

18. The method of claim 16, wherein the second colored member comprises a third portion covering a contact hole formed in the peripheral area.

19. The method of claim 16, wherein the second colored member comprises a fourth portion interposed between the plurality of color filters.

20. The method of claim 16, wherein the second colored member comprises a fifth portion disposed on the region where the color filters are overlapped with each other.

21. The method of claim 16, further comprising forming a pixel electrode on the thin film transistor layer.

22. The method of claim 21, wherein the forming of the pixel electrode is executed before the forming of the first colored member or between the forming of the first colored member and the forming of the second colored member.