Diffusion barrier layer for MEMS devices
First Claim
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1. A method of manufacturing a MEMS device, comprising:
- depositing a first metallic layer comprising a first metal;
depositing a diffusion barrier layer onto the first metallic layer;
depositing a second metallic layer comprising a second metal onto the diffusion barrier layer, wherein the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer; and
etching a same pattern in the first metallic layer, diffusion barrier layer, and second metallic layer,wherein etching the pattern in the second metallic layer comprises using a first etchant capable of etching the second metal but not an alloy of the first and second metal, andwherein etching the pattern in the first metallic layer comprises using a second etchant capable of etching the first metal but not an alloy of the first and second metal.
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Abstract
Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.
150 Citations
26 Claims
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1. A method of manufacturing a MEMS device, comprising:
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depositing a first metallic layer comprising a first metal; depositing a diffusion barrier layer onto the first metallic layer; depositing a second metallic layer comprising a second metal onto the diffusion barrier layer, wherein the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer; and etching a same pattern in the first metallic layer, diffusion barrier layer, and second metallic layer, wherein etching the pattern in the second metallic layer comprises using a first etchant capable of etching the second metal but not an alloy of the first and second metal, and wherein etching the pattern in the first metallic layer comprises using a second etchant capable of etching the first metal but not an alloy of the first and second metal. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing an interferometric modulator, comprising:
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depositing a first metallic layer comprising a first metal; depositing a diffusion barrier layer onto the first metallic layer; depositing a second metallic layer comprising a second metal onto the diffusion barrier layer, wherein the diffusion barrier layer is adapted to substantially inhibit any portion of the first metallic layer from mixing with any portion of the second metallic layer; and etching a same pattern in the second metallic layer, the diffusion barrier, and the first metallic layer, wherein etching the pattern in the second metallic layer comprises using a first etchant capable of etching the second metal but not an alloy of the first and second metal. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of manufacturing a movable electrode in a MEMS device, the method comprising:
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forming one or more first layers of the movable electrode, the first layer(s) comprising a first material and having tensile stress, the first material comprising a first metal; forming one or more second layers of the movable electrode adjacent to the first layer(s), the second layer(s) comprising a second material and having compressive stress; forming one or more third layers of the movable electrode, the third layer(s) comprising a third material and having tensile stress, the third material comprising a second metal; and etching a pattern in the one or more third layers using a first etchant capable of etching the second metal but not an alloy of the first and second metal, whereby a combination of the first, second, and third layers provides a tensile residual stress for the movable electrode. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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Specification