Plasma processing apparatus

• US 8,088,247 B2
• Filed: 03/10/2006
• Issued: 01/03/2012
• Est. Priority Date: 02/27/2006
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Joo, Kazuhiro, Fujii, Takashi, Usui, Tatehito
• Primary Examiner(s): Kackar, Ram N.
• Application Number:
  US11/371,921
• Publication Number:
  US 20070202613A1
• Time in Patent Office: 2,125 Days
• Field of Search: 156/345.25, 156/345.24
• US Class Current: 156/345.24
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis

Abstract

A plasma processing apparatus is provided using a method of measuring the thickness of a processed material, by which the actual remaining thickness or etching depth of a processed layer can be correctly measured online. The plasma processing apparatus includes a detector 11 for detecting interference light of multiple wavelengths from a surface of a sample during processing, pattern comparing means 15 for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, deviation comparing means 115 for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, remaining-thickness time-series data recording means 18 for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit 230 for deciding completion of a predetermined amount of etching by using the data on the thickness of the film.

Claims

1. A plasma processing apparatus for etching a film on a surface of a sample to a target remaining thickness by using plasma generated in the vacuum chamber, the sample being located in a vacuum chamber, the plasma processing apparatus, comprising:

a detector which detects interference light of multiple wavelengths from the surface of the sample at plural time points during the etching processing of the film;

a differentiator which differentiates a time change in intensity of the interference light of multiple wavelengths detected by the detector at each of the plural time points during the etching processing of the film so as to obtain an actual differential pattern of differential waveforms in the interference light from the sample;

a differential waveform pattern database which stores a plurality of standard differential waveform patterns corresponding to a plurality of remaining thicknesses of the film, the standard differential waveform pattern being obtained, before the processing of the sample, by differentiating a time change in intensity of the interference light of multiple wavelengths during similar processing of another similar sample;

a differential waveform comparator which compares the actual differential pattern to a plurality of standard differential patterns stored in the differential waveform pattern database, and outputs a minimum value of a pattern matching deviation;

a pattern matching deviation comparator to compare the minimum pattern matching deviation obtained from differential wave form comparator to a predetermined minimum pattern matching deviation set by a deviation setting unit;

a decision unit which decides that the remaining thickness indicated by the actual differential pattern is acceptable if the minimum value of the pattern matching deviation is not greater than the pre-determined value from the deviation setting unit and which decides that the remaining thickness indicated by the actual differential pattern is unacceptable if the minimum value of the pattern matching deviation is greater than the pre-determined value from the deviation setting unit, and a counter to keep track of the number of such occurrences and to display a warning if the rate of such occurrences increases to be more than a predetermined value;

a remaining thickness time series data recorder which stores data values of instantaneous remaining thickness at each of the plural time points during the etching processing if the remaining thickness is indicated as acceptable; and

if the remaining thickness indicated by the actual differential pattern is decided as being unacceptable, the decision unit decides to obtain the thickness of the film by extrapolation or regression analysis using the data values of instantaneous remaining thicknesses at the time points before the given time point during the etching process and stores the obtained thickness in the remaining-thickness time-series data recorder.

2. The plasma processing apparatus according to claim 1, further comprising a notifier which gives notification when a number of times when the minimum value of the pattern matching deviation obtained from the differential waveform comparator is equal to or less than a predetermined value of the pattern matching deviation set by the deviation setting unit exceeds a predetermined number of times.