Display device and sputtering target for producing the same

• US 8,088,259 B2
• Filed: 01/07/2009
• Issued: 01/03/2012
• Est. Priority Date: 02/17/2005
• Status: Active Grant

• Current Assignee: Klaus Schmidt
• Original Assignee: Klaus Schmidt
• Inventors: Gotoh, Hiroshi, Kugimiya, Toshihiro, Tomihisa, Katsufumi
• Primary Examiner(s): Clark, S. V
• Application Number:
  US12/349,562
• Publication Number:
  US 20090176113A1
• Time in Patent Office: 1,091 Days
• Field of Search: 204/298.01, 204/192.12, 148/518
• US Class Current: 204/192.1
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.

Claims

1. A sputtering target, which forms an Al alloy film wherein the Al alloy film comprises:

0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge; and

0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu, and Dy,

as alloy components,

wherein the at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge, is concentrated at an interface of contact in a layer of thickness of from 1 to 5 nm.

3. The sputtering target according to claim 1, wherein the Al alloy film comprises 0.3 to 1.8 at % of the at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu, and Dy.

5. The sputtering target according to claim 1, wherein the Al alloy film comprises 0.2 to 5.0 at % of the at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge.

7. The sputtering target according to claim 1, wherein concentration of the at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge in said layer is 2.5 times or more than an average concentration in the Al alloy film.

2. A sputtering target, which forms an Al alloy film, wherein the Al alloy film comprises:

0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge; and

0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W,

as alloy components,

wherein the at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge, is concentrated at an interface of contact in a layer of thickness of from 1 to 5 nm.

4. The sputtering target according to claim 2, wherein the Al alloy film comprises 0.2 to 0.8 at % of the at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W.

6. The sputtering target according to claim 2, wherein the Al alloy film comprises 0.2 to 5.0 at % of the at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge.

8. The sputtering target according to claim 2, wherein concentration of the at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge in said layer is 2.5 times or more than an average concentration in the Al alloy film.

9. A sputtering target, which forms an Al alloy film wherein the Al alloy film comprises:

0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge; and

0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu, and Dy,

as alloy components,

wherein the electrical resistivity of the Al alloy film is 5 μ

Ω

·

cm or less after heat treatment at 250 degrees Celsius for 30 minutes.

10. A sputtering target, which forms an Al alloy film, wherein the Al alloy film comprises:

0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu, and Ge; and

0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta, and W,

as alloy components,

wherein the electrical resistivity of the Al alloy film is 5 μ

Ω

·

cm or less after heat treatment at 250 degrees Celsius for 30 minutes.