Thiopyran derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition

• US 8,088,556 B2
• Filed: 05/19/2010
• Issued: 01/03/2012
• Est. Priority Date: 12/14/2007
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Nozaki, Koji
• Primary Examiner(s): CHU, JOHN S Y
• Application Number:
  US12/783,212
• Publication Number:
  US 20100227275A1
• Time in Patent Office: 594 Days
• Field of Search: 430/270.1, 430/907, 430/910, 526/256, 549/28
• US Class Current: 430/270.1
• CPC Class Codes: C07D 335/02 not condensed with other rings
• CPC Class Codes: C08F 220/1811 C10or C11-(Meth)acrylate, e.g. isodecyl (meth)acrylate, isobornyl (meth)acrylate or 2-naphthyl (meth)acrylate
• CPC Class Codes: C08F 220/283 and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
• CPC Class Codes: C08F 220/38 Esters containing sulfur
• CPC Class Codes: Y10S 430/108 Polyolefin or halogen containing
• CPC Class Codes: Y10S 430/111 Polymer of unsaturated acid or ester

Abstract

To provide a thiopyran derivative, having a structure expressed by the following general formula 1:

where X is O or S; R₁ is —H, —CH₃, C2-4 alkyl group, thioether group, or ketone group; R₂ is —H, —CH₃, or trifluoromethyl group; and R₁ and R₂ may be identical to or different from each other.

Claims

1. A thiopyran derivative, having a structure expressed by the following general formula 1:

2. A polymer, comprising:

a monomer unit containing a thiopyran derivative,

wherein the thiopyran derivative has a structure expressed by the following general formula 1;

3. The polymer according to claim 2, further comprising a monomer unit containing an acid labile group.

4. The polymer according to claim 3, wherein the acid labile group is a 2-alkyladamanthyl group.

5. The polymer according to claim 2, further comprising a monomer unit containing a lactone derivative.

6. The polymer according to claim 2, wherein an amount of the monomer unit containing the thiopyran derivative contained in the polymer is 10 mol % to 55 mol %.

7. A resist composition, comprising:

a polymer comprising a monomer unit containing a thiopyran derivative having a structure expressed by the following general formula 1;

8. The resist composition according to claim 7, wherein the resist composition has a refractive index of 1.520 or more with respect to light having a wavelength of 400 nm to 850 nm.

9. The resist composition according to claim 7, wherein the polymer is an acrylic resin.

10. The resist composition according to claim 7, further comprising an acid-generating agent.

11. The resist composition according to claim 7, further comprising a monomer of a thiopyran derivative,

wherein the thiopyran derivative has a structure expressed by the following general formula 1:

12. The resist composition according to claim 7, further comprising a homopolymer of a thiopyran derivative,

wherein the thiopyran derivative has a structure expressed by the following general formula 1: