Method of manufacturing a semiconductor device including a superlattice strain relief layer
First Claim
Patent Images
1. A method of manufacturing a semiconductor light emitting diode comprising the steps of:
- forming over and in contact with a substrate a GaN template layer;
forming over and in contact with said GaN template layer a superlattice structure, said superlattice structure comprising a plurality of layer pairs, a first layer of said layer pairs being AlN and a second layer of said layer pairs being GaN;
forming over said superlattice structure a multiple quantum well heterostructure of a composition including at least 25% aluminum;
forming a contact layer over said multiple quantum well heterostructure;
securing a planar heat sink body to said contact layer; and
thereafter removing said substrate and said GaN template layer;
whereby said semiconductor light emitting diode may emit light generally perpendicularly to the plane of the heat sink body.
7 Assignments
0 Petitions
Accused Products
Abstract
A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
-
Citations
4 Claims
-
1. A method of manufacturing a semiconductor light emitting diode comprising the steps of:
-
forming over and in contact with a substrate a GaN template layer; forming over and in contact with said GaN template layer a superlattice structure, said superlattice structure comprising a plurality of layer pairs, a first layer of said layer pairs being AlN and a second layer of said layer pairs being GaN; forming over said superlattice structure a multiple quantum well heterostructure of a composition including at least 25% aluminum; forming a contact layer over said multiple quantum well heterostructure; securing a planar heat sink body to said contact layer; and thereafter removing said substrate and said GaN template layer; whereby said semiconductor light emitting diode may emit light generally perpendicularly to the plane of the heat sink body. - View Dependent Claims (2)
-
-
3. A method of manufacturing a semiconductor light emitting diode comprising the steps of:
-
forming over and in contact with a substrate a GaN template layer; forming over and in contact with said GaN template layer a superlattice structure, said superlattice structure comprising a plurality of layer pairs, a first layer of said layer pairs being AlN and a second layer of said layer pairs being GaN; forming over said superlattice structure a multiple quantum well heterostructure of a composition including at least 25% aluminum; forming a contact layer over said multiple quantum well heterostructure; securing a transfer substrate to said contact layer; removing said substrate and said GaN template layer; securing said semiconductor light emitting diode to a planar heat sink body at a surface opposite said transfer substrate; and removing said transfer substrate from said semiconductor light emitting diode; whereby said semiconductor light emitting diode may emit light generally perpendicularly to the plane of the heat sink body. - View Dependent Claims (4)
-
Specification