Electron device using oxide semiconductor and method of manufacturing the same
First Claim
1. A method of manufacturing an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, the method comprising:
- a first step of forming a metal oxide layer; and
a second step of forming the semiconductor region by making a part of the metal oxide layer to have low resistancewherein the second step includes a step of implanting a hydrogen ion to a part of the metal oxide layer.
0 Assignments
0 Petitions
Accused Products
Abstract
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
-
Citations
1 Claim
-
1. A method of manufacturing an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, the method comprising:
-
a first step of forming a metal oxide layer; and a second step of forming the semiconductor region by making a part of the metal oxide layer to have low resistance wherein the second step includes a step of implanting a hydrogen ion to a part of the metal oxide layer.
-
Specification
-
- Resources
-
Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
-
Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
-
InventorsHayashi, Ryo, Sano, Masafumi
-
Primary Examiner(s)TRAN, MINH LOAN
-
Application NumberUS12/949,389Publication NumberTime in Patent Office411 DaysField of Search257/E21.334, 438/149, 438/151, 438/515US Class Current438/149CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/7869 having a semiconductor body...
