Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same
First Claim
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1. A method of manufacturing a thin-film transistor comprising:
- forming a gate electrode on a base substrate;
forming a gate insulation layer on the substrate to cover the gate electrode;
forming an active layer on the gate insulation layer to cover the gate electrode;
forming a buffer layer on the active layer to suppress oxidation of the active layer, the buffer layer comprising a first connection layer;
forming the first connection layer using at least a first gas in a deposition process;
gradually increasing a flow rate of the first gas as the deposition process progresses;
primarily etching first predefined portions of the buffer layer and the active layer;
forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and
secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode.
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Abstract
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
8 Citations
23 Claims
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1. A method of manufacturing a thin-film transistor comprising:
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forming a gate electrode on a base substrate; forming a gate insulation layer on the substrate to cover the gate electrode; forming an active layer on the gate insulation layer to cover the gate electrode; forming a buffer layer on the active layer to suppress oxidation of the active layer, the buffer layer comprising a first connection layer; forming the first connection layer using at least a first gas in a deposition process; gradually increasing a flow rate of the first gas as the deposition process progresses; primarily etching first predefined portions of the buffer layer and the active layer; forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a thin-film transistor comprising:
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forming a gate electrode on a base substrate; forming a gate insulation layer on the substrate to cover the gate electrode; forming an active layer on the gate insulation layer to cover the gate electrode; forming a buffer layer on the active layer to suppress oxidation of the active layer, the buffer layer including at least a connection layer; forming the connection layer using at least a first gas in a deposition process; gradually decreasing a flow rate of the first gas as the deposition process progresses; primarily etching first predefined portions of the buffer layer and the active layer; forming a source electrode and a drain electrode on the primarily etched active layer, wherein the source electrode and the drain electrode are separated from each other by a predetermined distance; and secondarily etching second predefined portions of the buffer layer and the active layer, using as an etching mask at least one of the source electrode and the drain electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification