Semiconductor device and method for manufacturing the same

• US 8,089,144 B2
• Filed: 12/10/2009
• Issued: 01/03/2012
• Est. Priority Date: 12/17/2008
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo, Yamanaka, Akitoshi, Yokura, Hisanori
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US12/654,087
• Publication Number:
  US 20100148341A1
• Time in Patent Office: 754 Days
• Field of Search: 257/688, 257/692, 257/739, 257/776, 257/415, 257/E23.016, 438/117, 438/118, 438/51
• US Class Current: 257/688
• CPC Class Codes: B81B 2207/097 Interconnects arranged on the substrate or the lid, and covered by the package seal
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01C 19/5783 Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05558 conformal layer on a patterned surface
• CPC Class Codes: H01L 2224/114 by blanket deposition of the material of the bump connector
• CPC Class Codes: H01L 2224/116 by patterning a pre-deposited material
• CPC Class Codes: H01L 2224/13009 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13011 comprising apertures or cavities, e.g. hollow bump
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/2518 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/80001 : by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 2224/81805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/12 : Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10157 : at the active surface
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.

Claims

1. A semiconductor device comprising:

a sensor including a sensor structure and a periphery element, wherein the sensor structure is disposed on a first side of the sensor, and the periphery element surrounds the sensor structure; and

a cap covering the sensor structure and having a second side, which is bonded to the first side of the sensor,

wherein the cap includes a first wiring layer, which is disposed on the second side of the cap,

wherein the first wiring layer steps over the periphery element,

wherein the sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion,

wherein the sensor side connection portion is bonded to the cap side connection portion,

wherein at least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other,

wherein the sensor further includes a SOI substrate having a first conductive layer, an insulation layer, and a second conductive layer,

wherein the first conductive layer, the insulation layer, and the second conductive layer are stacked in this order,

wherein the sensor structure and the periphery element are disposed in the first conductive layer,

wherein the insulation layer includes a contact portion, which is disposed between the periphery element and the second conductive layer,

wherein the contact portion electrically couples the periphery element and the second conductive layer,

wherein the cap further includes a conductive substrate,

wherein the cap side connection portion is disposed on the conductive substrate,

wherein the cap further includes a second wiring layer having a wiring portion and a sealing portion,

wherein the wiring portion is electrically isolated from the sealing portion,

wherein the wiring portion and the sealing portion provide the cap side connection portion,

wherein the wiring portion is bonded to a part of the sensor structure via the eutectic alloy,

wherein the sealing portion has a ring shape, which corresponds to the periphery element,

wherein the sealing portion is bonded to the periphery element via the eutectic alloy, and

wherein the periphery element, the contact portion, the second conductive layer, the sealing portion, and the conductive substrate are electrically coupled with each other so that the periphery element, the contact portion, the second conductive layer, the sealing portion, and the conductive substrate have the same electric potential.

2. The semiconductor device according to claim 1,

wherein a part of the sensor structure and the periphery element provide the sensor side connection portion,

wherein the cap further includes a second wiring layer having a wiring portion and a sealing portion,

wherein the wiring portion is electrically isolated from the sealing portion,

wherein the wiring portion and the sealing portion provide the cap side connection portion,

wherein the wiring portion is bonded to the part of the sensor structure via the eutectic alloy,

wherein the sealing portion has a ring shape, which corresponds to the periphery element,

wherein the sealing portion is bonded to the periphery element via the eutectic alloy so that a sealed portion is provided between the cap and the sensor, and

wherein the sensor structure is accommodated in the sealed portion.

3. The semiconductor device according to claim 2,

wherein the wiring portion has a flat surface, which is bonded to the part of the sensor structure.

4. The semiconductor device according to claim 1,

wherein the sensor further includes a metallic layer, which provides the sensor side connection portion,

wherein the metallic layer faces the cap side connection portion, and

wherein at least one of the metallic layer and the cap side connection portion provides the eutectic alloy so that the metallic layer and the cap side connection portion are bonded to each other.

5. A method for manufacturing a semiconductor device comprising:

forming a sensor structure on a first side of a sensor;

forming a periphery element surrounding the sensor structure;

preparing a cap for covering the sensor structure;

forming a first wiring layer on a second side of the cap;

bonding the first side of the sensor and the second side of the cap, and

forming a second wiring layer on the second side of the cap,

wherein the first wiring layer steps over the periphery element,

wherein the sensor includes a sensor side connection portion, and the cap includes a cap side connection portion,

wherein the bonding includes alloying at least one of the sensor side connection portion and the cap side connection portion to be an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other,

wherein a part of the sensor structure and the periphery element provide the sensor side connection portion,

wherein the second wiring layer includes a wiring portion and a sealing portion, which provide the cap side connection portion,

wherein the wiring portion is electrically isolated from the sealing portion,

wherein the wiring portion and the sealing portion provide the cap side connection portion,

wherein the wiring portion is bonded to the part of the sensor structure via the eutectic alloy,

wherein the sealing portion has a ring shape, which corresponds to the periphery element,

wherein the sealing portion is bonded to the periphery element via the eutectic alloy so that a sealed portion is provided between the cap and the sensor,

wherein the sensor structure is accommodated in the sealed portion,

wherein the sensor further includes a SOI substrate having a first conductive layer, an insulation layer, and a second conductive layer, which are stacked in this order,

wherein the sensor structure and the periphery element are formed in the first conductive layer,

wherein the method further comprises forming a contact in the insulation layer so as to electrically couple between the periphery element and the second conductive layer,

wherein the cap further includes a conductive substrate,

wherein the cap side connection portion is disposed on the conductive substrate,

wherein the sealing portion is electrically coupled with the conductive substrate, and

wherein the periphery element, the contact portion, the second conductive layer, the sealing portion, and the conductive substrate are electrically coupled with each other so that the periphery element, the contact portion, the second conductive layer, the sealing portion, and the conductive substrate have the same electric potential.

6. The method according to claim 5, further comprising:

forming a metallic layer on the first side of the sensor, the metallic layer which provides the sensor side connection portion; and

forming a second wiring layer on the second side of the cap, and forming a conductive layer on the second wiring layer,

wherein the second wiring layer and the conductive layer provide the cap side connection portion, and

wherein the bonding includes;

contacting the conductive layer on the metallic layer so as to sandwich the conductive layer between the metallic layer and the second wiring layer; and

heating the metallic layer, the conductive layer and the second wiring layer so that the conductive layer and a part of the metallic layer are alloyed to be the eutectic alloy, and the conductive layer and a part of the second wiring layer are alloyed to be the eutectic alloy.

7. The method according to claim 5, further comprising:

forming a metallic layer on the first side of the sensor, and forming a conductive layer on the metallic layer; and

forming a second wiring layer on the second side of the cap, wherein the metallic layer and the conductive layer provide the sensor side connection portion,

wherein the second wiring layer provides the cap side connection portion, and

wherein the bonding includes;

contacting the conductive layer on the second wiring layer so as to sandwich the conductive layer between the metallic layer and the second wiring layer; and

heating the metallic layer, the conductive layer and the second wiring layer so that the conductive layer and a part of the metallic layer are alloyed to be the eutectic alloy, and the conductive layer and a part of the second wiring layer are alloyed to be the eutectic alloy.

8. The method according to claim 5, further comprising:

forming a metallic layer on the first side of the sensor, the metallic layer which provides the sensor side connection portion; and

forming a second wiring layer on the second side of the cap, and forming an eutectic alloy layer on the second wiring layer,

wherein the second wiring layer and the eutectic alloy layer provide the cap side connection portion, and

wherein the bonding includes;

contacting the eutectic alloy layer on the metallic layer so as to sandwich the eutectic alloy layer between the metallic layer and the second wiring layer; and

heating the metallic layer, the eutectic alloy layer and the second wiring layer so that a part of the eutectic alloy layer and a part of the metallic layer are alloyed to be the eutectic alloy, and a part of the eutectic alloy layer and a part of the second wiring layer are alloyed to be the eutectic alloy.

9. The method according to claim 5, further comprising:

forming a metallic layer on the first side of the sensor, and forming an eutectic alloy layer on the metallic layer; and

forming a second wiring layer on the second side of the cap,

wherein the metallic layer and the eutectic alloy layer provide the sensor side connection portion,

wherein the second wiring layer provides the cap side connection portion, and

wherein the bonding includes;

contacting the eutectic alloy layer on the second wiring layer so as to sandwich the eutectic alloy layer between the metallic layer and the second wiring layer; and

heating the metallic layer, the eutectic alloy layer and the second wiring layer so that the eutectic alloy layer and a part of the metallic layer are alloyed to be the eutectic alloy, and the eutectic alloy layer and a part of the second wiring layer are alloyed to be the eutectic alloy.

10. The method according to claim 5, further comprising:

forming a metallic layer on the first side of the sensor, the metallic layer which provides the sensor side connection portion; and

forming a conductive layer on the second side of the cap,

wherein the conductive layer provides the cap side connection portion, and

wherein the bonding includes;

contacting the conductive layer on the metallic layer; and

heating the metallic layer and the conductive layer so that a part of the conductive layer and a part of the metallic layer are alloyed to be the eutectic alloy.

11. The method according to claim 5, further comprising:

forming a metallic layer on the first side of the sensor, the metallic layer which provides the sensor side connection portion; and

forming an eutectic alloy layer on the second side of the cap,

wherein the eutectic alloy layer provides the cap side connection portion, and

wherein the bonding includes;

contacting the eutectic alloy layer on the metallic layer; and

heating the metallic layer and the eutectic alloy layer so that a part of the eutectic alloy layer and a part of the metallic layer are alloyed to be the eutectic alloy.

12. The method according to claim 6,

wherein the metallic layer faces the cap side connection portion.

13. The method according to claim 5, further comprising:

forming a first conductive layer on the first side of the sensor,

forming a second wiring layer on the second side of the cap,

wherein the first conductive layer provides the sensor side connection portion,

wherein the second wiring layer provides the cap side connection portion, and

wherein the bonding includes;

contacting the first conductive layer on the second wiring layer; and

heating the first conductive layer and the second wiring layer so that a part of the first conductive layer and a part of the second wiring layer are alloyed to be the eutectic alloy.

14. The method according to claim 5, further comprising:

forming a first conductive layer on the first side of the sensor,

forming an eutectic alloy layer on the second side of the cap,

wherein the first conductive layer provides the sensor side connection portion,

wherein the eutectic alloy layer provides the cap side connection portion, and

wherein the bonding includes;

contacting the first conductive layer on the eutectic alloy layer; and

heating the first conductive layer and the eutectic alloy layer so that a part of the first conductive layer and a part of the eutectic alloy layer are alloyed to be the eutectic alloy.

15. The method according to claim 5,

wherein, in the bonding, the part of the sensor structure is bonded to a flat surface of the wiring portion.

16. A semiconductor device comprising:

a sensor having a plate shape and including a sensor structure, which is arranged on a first side of the sensor; and

a cap having a second side, which is bonded to the first side of the sensor,

wherein the cap includes a first wiring layer, an insulation film and a second wiring layer, which are disposed on the second side of the cap,

wherein the first wiring layer connects between an outer periphery of the first side of the sensor and the sensor structure,

wherein the insulation film is disposed on the first wiring layer, and includes an opening,

wherein the first wiring layer is exposed from the insulation film via the opening,

wherein the second wiring layer includes a wiring portion,

wherein the wiring portion is disposed on the first wiring layer exposed from the insulation film,

wherein the wiring portion has a concavity, which is disposed over the opening and is concaved toward the opening,

wherein a region of the sensor structure connecting to the wiring portion is defined as a contact region, and

wherein the contact region contacts a part of a surface of the wiring portion other than the concavity.

17. The semiconductor device according to claim 16,

wherein the part of the surface of the wiring portion is spaced apart from a region of the wiring portion corresponding to the opening of the insulation film.

18. The semiconductor device according to claim 16,

wherein the sensor further includes a periphery element, which surrounds the sensor structure and disposed on the first side of the sensor,

wherein the second wiring layer further includes a sealing portion,

wherein the sealing portion has a ring shape, which corresponds to the periphery element,

wherein the sealing portion is disposed on the insulation film, and is electrically isolated from the first wiring layer,

wherein the sealing portion of the cap is bonded to the periphery element of the sensor, and

wherein the sensor structure is sealed in a space between the cap and the sensor.

19. The semiconductor device according to claim 18,

wherein the sensor further includes a connection element, which is disposed on the first side of the sensor at a position outside of a surrounded region with the periphery element,

wherein the connection element is coupled with a wire for connecting to an external circuit, and

wherein the wiring portion facing the outer periphery of the first side of the sensor is coupled with the connection element so that the sensor structure is electrically coupled with the external circuit via the wiring portion, the first wiring layer, the connection element and the wire.

20. The semiconductor device according to claim 18,

wherein the wiring portion facing the outer periphery of the first side of the sensor is coupled with a wire for connecting to an external circuit, and

wherein the sensor structure is electrically coupled with the external circuit via the wiring portion, the first wiring layer and the wire.

21. A method for manufacturing a semiconductor device comprising:

forming a sensor structure on a first side of a sensor having a plate shape;

forming and patterning a first wiring layer on a second side of a cap in such a manner that the first wiring layer connects between an outer periphery of the first side of the sensor and the sensor structure;

forming an insulation film on the first wiring layer;

forming an opening in the insulation film so as to expose the first wiring layer from the insulation film via the opening, wherein a region of the sensor structure to be connected to the cap is defined as a contact region, and the opening of the insulation film does not face the contact region;

forming and patterning a second wiring layer on the insulation film so as to have a wiring portion, wherein the wiring portion is disposed on the first wiring layer exposed from the insulation film, and the wiring portion has a concavity with a bottom;

flattening a surface of the wiring portion so as to leave the bottom of the concavity; and

bonding the second side of the cap and the first side of the sensor in such a manner that the contact region of the sensor structure is bonded to a part of a surface of the wiring portion, which is spaced apart from a region of the wiring portion corresponding to the opening of the insulation film.

22. The method according to claim 21,

wherein the forming the sensor structure includes forming a periphery element, which surrounds the sensor structure and disposed on the first side of the sensor,

wherein the forming and patterning the second wiring layer includes forming a sealing portion having a ring shape, which corresponds to the periphery element,

wherein the sealing portion is disposed on the insulation film, and is electrically isolated from the first wiring layer, and

wherein the bonding the second side of the cap and the first side of the sensor includes:

bonding the sealing portion of the cap and the periphery element of the sensor; and

sealing the sensor structure in a space between the cap and the sensor.