Semiconductor device including increased capacity leadframe

• US 8,089,145 B1
• Filed: 11/17/2008
• Issued: 01/03/2012
• Est. Priority Date: 11/17/2008
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Kang, Dae Byoung, Kim, Gwang Ho, Kim, Jin Seong, Park, Dong Joo
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US12/272,606
• Time in Patent Office: 1,142 Days
• Field of Search: 257/666, 257/678, 257/690, 257/738, 257/787, 257/E23.01, 257/E23.011, 257/E23.037, 257/E23.069, 257/676, 257/696, 257/737
• US Class Current: 257/690
• CPC Class Codes: H01L 21/4842 Mechanical treatment, e.g. punching, cutting, deforming, cold welding
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/92 Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/49517 Additional leads
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/078 : Adhesive characteristics other than chemical
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

In accordance with the present invention, there is provided a semiconductor package (e.g., a QFP package) including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package. More particularly, the semiconductor package of the present invention includes a generally planar die pad or die paddle defining multiple peripheral edge segments. In addition, the semiconductor package includes a plurality of leads. Some of these leads are provided in two concentric rows or rings which at least partially circumvent the die pad, with other leads including portions which protrude from respective side surfaces of a package body of the semiconductor package. Connected to the top surface of the die pad is at least one semiconductor die which is electrically connected to at least some of the leads. At least portions of the die pad, the leads, and the semiconductor die are encapsulated by the package body.

Claims

1. A semiconductor package, comprising:

a generally planar die pad defining multiple peripheral edge segments;

a plurality of first leads disposed in spaced relation to the die pad, each of the first leads defining a land;

a plurality of second leads disposed in spaced relation to the die pad, each of the second leads defining a land;

a plurality of third leads disposed in spaced relation to the die pad;

a semiconductor die attached to the die pad and electrically connected to at least one of each of the first, second and third leads;

a package body defining a generally planar bottom surface and multiple side surfaces, the package body at least partially encapsulating the semiconductor die and the first, second and third leads, the package body including a plurality of openings formed in the bottom surface thereof, each of the openings extending to a respective one of the lands of the first and second leads; and

a plurality of conductive elements disposed within each of the openings, each of the conductive elements being electrically connected to a respective one of the lands and protruding from the bottom surface of the package body, the conductive elements attached to the first leads being separated from corresponding ones of the conductive elements attached to the second leads by at least one groove which is formed in the bottom surface and extends therebetween.

2. The semiconductor package of claim 1 wherein the conductive elements comprise solder balls filled into respective ones of the openings.

3. The semiconductor package of claim 1 wherein the die pad has a generally quadrangular configuration, and the first, second and third leads are segregated into at least four sets which each extend along a respective one of the peripheral edge segments of the die pad.

4. The semiconductor package of claim 1 wherein each of the openings has a tapered configuration so as to be of a first width at the bottom surface of the package body and a second width at a respective one of the lands defined by the first and second leads, the first width exceeding the second width.

5. The semiconductor package of claim 1 wherein the die pad is fully encapsulated by the package body.

6. The semiconductor package of claim 1 wherein the semiconductor die is electrically connected to the first, second and third leads by conductive wires which are covered by the package body.

7. The semiconductor package of claim 6 wherein:

each of the first leads includes opposed top and bottom surfaces, the bottom surface of each of the first leads defining the land thereof, and the top surface of each of the first leads defining a wire bonding region;

each of the second leads includes opposed top and bottom surfaces, the bottom surface of each of the second leads defining the land thereof, and the top surface of each of the second leads defining a wire bonding region; and

the conductive wires extend from the semiconductor die to respective ones of the wire bonding regions of the first and second leads.

8. The semiconductor package of claim 7 wherein:

each of the third leads includes an inner portion and an outer portion, the inner portion of each of the third leads defining a wire bonding region;

the conductive wires extend from the semiconductor die to respective ones of the wire bonding regions of the third leads; and

the outer portions of the third leads protrude from respective ones of the side surfaces of the package body.

9. The semiconductor package of claim 8 wherein the die pad has a top surface, and the wire bonding regions of the first, second and third leads extend in generally coplanar relation to each other and to the top surface of the die pad.

10. A semiconductor package, comprising:

a generally planar die pad defining multiple peripheral edge segments;

a plurality of first leads disposed in spaced relation to the die pad, each of the first leads defining a land;

a plurality of second leads disposed in spaced relation to the die pad, each of the second leads defining a land;

a plurality of third leads disposed in spaced relation to the die pad;

a semiconductor die attached to the die pad and electrically connected to at least one of each of the first, second and third leads;

a plurality of conductive elements electrically connected to respective ones of the lands defined by the first and second leads; and

a package body defining a generally planar bottom surface and multiple side surfaces, the package body at least partially encapsulating the semiconductor die, the first, second and third leads, and the conductive elements such that the conductive elements protrude from the bottom surface of the package body, and a greater portion of each of the conductive elements is encapsulated by the package body than protrudes from the bottom surface thereof.

11. The semiconductor package of claim 10 wherein the die pad has a generally quadrangular configuration, and the first, second and third leads are segregated into at least four sets which each extend along a respective one of the peripheral edge segments of the die pad.

12. The semiconductor package of claim 10 wherein the semiconductor die is electrically connected to the first, second and third leads by conductive wires which are covered by the package body.

13. The semiconductor package of claim 12 wherein:

each of the first leads includes opposed top and bottom surfaces, the bottom surface of each of the first leads defining the land thereof, and the top surface of each of the first leads defining a wire bonding region;

each of the second leads includes opposed top and bottom surfaces, the bottom surface of each of the second leads defining the land thereof, and the top surface of each of the second leads defining a wire bonding region; and

the conductive wires extend from the semiconductor die to respective ones of the wire bonding regions of the first and second leads.

14. The semiconductor package of claim 13 wherein:

each of the third leads includes an inner portion and an outer portion, the inner portion of each of the third leads defining a wire bonding region;

the conductive wires extend from the semiconductor die to respective ones of the wire bonding regions of the third leads; and

the outer portions of the third leads protrude from respective ones of the side surfaces of the package body.

15. The semiconductor package of claim 14 wherein the die pad has a top surface, and the wire bonding regions of the first, second and third leads extend in generally coplanar relation to each other and to the top surface of the die pad.

16. A semiconductor package, comprising:

a generally planar die pad defining opposed top and bottom surfaces and multiple peripheral edge segments;

a plurality of first leads disposed in spaced relation to the die pad, each of the first leads defining a land and a wire bonding region which extends in generally coplanar relation to the top surface of the die pad;

a plurality of second leads disposed in spaced relation to the die pad, each of the second leads defining a land and a wire bonding region which extends in generally coplanar relation to the top surface of the die pad;

a plurality of third leads disposed in spaced relation to the die pad, each of the third leads defining a wire bonding region which extends in generally coplanar relation to the top surface of the die pad;

a semiconductor die attached to the top surface of the die pad and electrically connected to the wire bonding region of at least one of each of the first, second and third leads; and

a package body at least partially encapsulating the semiconductor die and the first, second and third leads, the package body including a single recess formed in a generally planar bottom surface defined thereby, each of the lands of the first and second leads and the bottom surface of the die pad being at least partially exposed within the recess.

17. The semiconductor package of claim 16 further comprising a plurality of conductive elements disposed within the recess and electrically connected to respective ones of the lands defined by the first and second leads.

18. The semiconductor package of claim 16 wherein the die pad has a generally quadrangular configuration, and the first, second and third leads are segregated into at least four sets which each extend along a respective one of the peripheral edge segments of the die pad.

19. The semiconductor package of claim 16 wherein:

the semiconductor die is electrically connected to the first, second and third leads by conductive wires which are covered by the package body

each of the first leads includes opposed top and bottom surfaces, the bottom surface of each of the first leads defining the land thereof, and the top surface of each of the first leads defining the wire bonding region thereof;

each of the second leads includes opposed top and bottom surfaces, the bottom surface of each of the second leads defining the land thereof, and the top surface of each of the second leads defining the wire bonding region thereof; and

the conductive wires extend from the semiconductor die to respective ones of the wire bonding regions of the first and second leads.

20. The semiconductor package of claim 19 wherein:

each of the third leads includes an inner portion and an outer portion, the inner portion of each of the third leads defining the wire bonding region thereof;

the conductive wires extend from the semiconductor die to respective ones of the wire bonding regions of the third leads; and

the outer portions of the third leads protrude from respective ones of multiple side surfaces defined by the package body.