Apparatus and method for thin film deposition

• US 8,092,598 B2
• Filed: 07/20/2005
• Issued: 01/10/2012
• Est. Priority Date: 12/16/2004
• Status: Active Grant

• Current Assignee: Kookje Electric Korea Co., Ltd.
• Original Assignee: Fusion Aid Co., Ltd.
• Inventors: Baek, Yong-Ku, Lee, Seung-Hoon
• Primary Examiner(s): Kackar, Ram
• Assistant Examiner(s): Chandra, Satish
• Application Number:
  US10/559,944
• Publication Number:
  US 20070095286A1
• Time in Patent Office: 2,365 Days
• Field of Search: 118/715, 156/345.33, 156/345.34
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45589 Movable means, e.g. fans
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: H01J 2237/332 Coating

Abstract

Disclosed herein is a thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor. The apparatus comprises: a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas; a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process; a gas retaining means having a plurality of reaction cells for partitionally accommodating and retaining the respective gases distributed from the gas distribution means; a rotation driving means for rotating the gas retaining means such that the gases retained in the respective reaction cells are exposed to the substrates in sequence; and a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber.

Claims

1. A thin film deposition apparatus having a reaction chamber for forming a thin film on a plurality of substrates rested on a susceptor, the apparatus comprising:

a gas supply means for supplying a plurality of gases to the inside of the reaction chamber from the outside, the gases including a reaction gas;

a gas distribution means for distributing and spraying the gases supplied from the gas supply means so as to conform to the purpose of a process;

a gas retaining means for partitionally accommodating and concurrently retaining the gases distributed from the gas distribution means, the gas retaining means comprising;

an upper plate having a bottom face; and

a plurality of partition walls protruding from the bottom face and installed at regular intervals below the bottom face, such that the partition walls define therebetween a plurality of reaction cells below the upper plate, alls wherein the partition walls are configured so as to increasingly broaden the width of the reaction cells from the inside to the outside of the gas retaining means and to partitionally accommodate and concurrently retain the respective gases distributed from the gas distribution means wherein the partition wall is further provided, at both lower end sides thereof, with an extension plate extended in parallel to the susceptor, so that gas mixing between neighboring reaction cells is restricted;

a rotation driving means for rotating selectively one of the gas retaining means and the susceptor such that the gases concurrently retained in the respective reaction cells are exposed to the substrates in sequence; and

a gas exhaust means for pumping the gases retained by the gas retaining means to the outside of the reaction chamber;

wherein the gas distribution means further comprises a fixing means for fixing the as retaining means;

a distribution main body inserted into the central portion of the upper plate and closely contacting the respective partition walls;

a gasinlet ports formed in the distribution main bodysuch that gases supplied from the gas supply means are individually introduced;

a distribution chamber fluid-communicated with the gas inlet ports and having a desired space formed therein for partitionally accommodating the respective gases; and

a plurality of lateral spray ports formed in the later face of the distribution main body such that the gases accommodated in the distribution chamber are sprayed to the lateral faces of the respective reaction cells.

2. The apparatus of claim 1, wherein the gas retaining means is connected at its central portion with the lower end of the gas distribution means, and the reaction cell being integrally rotated together with the gas distribution means.

3. The apparatus of claim 1, wherein the gas supply means supplies at least two or more reaction gases and a purge gas.

4. The apparatus of claim 1, wherein the upper plate has the form of a circular plate, and the respective partition walls are installed in a radial direction.

5. The apparatus of claim 1, wherein the upper plate has the form of a circular plate, and the respective partition walls are installed in a spiral form.

6. The apparatus of claim 1, wherein among the reaction cells, a reaction cell requiring an extension of gas retaining time is further provided at its periphery with an outer peripheral wall connecting the end portions of the partition walls.

7. The apparatus of claim 1, wherein the spacing between the extension plate and the substrate is maintained below 3 mm while not contacting each other.

8. The apparatus of claim 1, wherein the rotation driving means has a rotation frequency from 30 to 180 rpm.

9. The apparatus of claim 1, wherein, among the distribution chambers, a distribution chamber accommodating a purge gas is further provided with a downward spray port formed in the bottom face of the distribution main body, along with the lateral spray port, such that the purge gas can be sprayed vertical-downwardly.

10. The apparatus of claim 1, wherein the fixing means further comprises:

a plurality connection grooves formed in the distribution main body; and

a connection protrusion formed in on end portion of the respective partition walls so as to be inserted and connected into the connection groove.

11. The apparatus of claim 1, wherein among the distribution chamber, distribution chambers, to which identical gases are supplied, are fluid-communicated with each other.

12. The apparatus of claim 1, wherein the gas retaining means further comprises:

a shower head divided in plural such that gases distributed from the gas distribution means are sprayed vertical-downwardly through a plurality of spray ports formed in the bottom face thereof; and

a plurality of partition walls formed at regular intervals in the bottom face of the shower head such that a plurality of reaction cells are formed correspondingly to the respective shower heads.

13. The apparatus of claim 12, wherein the gas distribution means further comprises:

a fixing means for fixing the gas retaining means;

a distribution main body having the form of a circular plate and inserted into the central portion of the shower head;

a plurality of gas inlet ports formed in the distribution main body such that gases supplied from the gas supply means are individually introduced;

a distribution chamber fluid-communicated with the gas inlet ports and having a desired space for partitionally accommodating the respective gases; and

a plurality of lateral spray ports formed in the later face of the distribution main body such that the gases accommodated in the distribution chamber are sprayed to partitioned spaces of the inside of the shower head.

14. The apparatus of claim 1, wherein a restriction plate is installed in such a way as to be protruded along the inner peripheral face of the reaction chamber so as to be closely contacted with the upper periphery of the susceptor when it ascends, and the gas exhaust means is installed such that gas in a space between the inner peripheral face of the upper space of the reaction chamber and the outer periphery of the reaction cell can be pumped through an exhaust port, the reaction chamber being restricted by the ascending susceptor.

15. The apparatus of claim 14, wherein the gas exhaust means further comprises:

a plurality of pumping cell partitioned to no more than the peripheral length of the reaction cell; and

an exhaust pump for pumping gases through an exhaust port connected with the respective pumping cells.

16. The apparatus of claim 15, wherein the pumping cell further comprises:

a primary exhaust passageway formed in a space above the restriction plate;

a separation plate having a plurality of through-holes formed above the primary exhaust passageway; and

a secondary exhaust passageway formed in a space above the separation plate and connected with the exhaust port.

17. The apparatus of claim 1, further comprising a radical generating means for radicalizing one or more reaction gas among the gases supplied from the gas supply means.

18. The apparatus of claim 1, wherein among the reaction cells, at least one reaction cell, to which a reaction gas is supplied, is further provided with a plasma excitation means for plasma-exciting a reaction gas inside the reaction cell, the plasma excitation means being electrically connected with an external RF power application device at the face thereof corresponding to the upper portion of the substrate.