Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
First Claim
1. A semiconductor device comprising:
- an active layer, to which nitrogen and hydrogen are added, and which is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZn1-xO, (ii) amorphous ZnO or amorphous MgxZn1-xO, or (iii) either (a) mixture of polycrystalline ZnO and amorphous ZnO or (b) mixture of polycrystalline MgxZn1-xO and amorphous MgxZn1-xO; and
a blocking member for blocking the active layer from an atmosphere such that the atmosphere substantially does not influence a region, in which a movable charge moves, of the active layer, whereinsaid active layer includes intentionally added dopants essentially consisting of said nitrogen and said hydrogen having concentrations so that a threshold voltage of a gate voltage of the semiconductor device, when a voltage between a drain and a source region is fixed at 10V, is controlled to be substantially is in a range between 0V and 3V.
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Abstract
In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer (5). Formed on the semiconductor layer (5) are a source electrode (6) and a drain electrode (7). A protective layer (8) covers them, so that the semiconductor layer (5) is blocked from an atmosphere. The semiconductor layer (5) (active layer) is made of, e.g., a semiconductor containing polycrystalline ZnO to which, e.g., a group V element is added. This allows practical use of a semiconductor device which has an active layer made of zinc oxide and which includes an protective layer for blocking the active layer from an atmosphere.
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Citations
31 Claims
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1. A semiconductor device comprising:
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an active layer, to which nitrogen and hydrogen are added, and which is made of a semiconductor containing (i) polycrystalline ZnO or polycrystalline MgxZn1-xO, (ii) amorphous ZnO or amorphous MgxZn1-xO, or (iii) either (a) mixture of polycrystalline ZnO and amorphous ZnO or (b) mixture of polycrystalline MgxZn1-xO and amorphous MgxZn1-xO; and a blocking member for blocking the active layer from an atmosphere such that the atmosphere substantially does not influence a region, in which a movable charge moves, of the active layer, wherein said active layer includes intentionally added dopants essentially consisting of said nitrogen and said hydrogen having concentrations so that a threshold voltage of a gate voltage of the semiconductor device, when a voltage between a drain and a source region is fixed at 10V, is controlled to be substantially is in a range between 0V and 3V. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification