Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a first conductive film over a substrate;
an inorganic insulating film over said first conductive film;
an organic film including Si over said inorganic insulating film;
a contact hole through said inorganic insulating film and said organic film including Si,wherein an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole is taper like having an angle range of 30 degree to 80 degree from a horizontal surface, anda second conductive film over said organic film including Si and connected to said first conductive film through said contact hole,wherein a lower side edge portion of an inner surface of the organic film including Si is intersected with an upper side edge portion of an inner surface of the inorganic insulating film.
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Abstract
It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.
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Citations
26 Claims
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1. A semiconductor device comprising:
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a first conductive film over a substrate; an inorganic insulating film over said first conductive film; an organic film including Si over said inorganic insulating film; a contact hole through said inorganic insulating film and said organic film including Si, wherein an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole is taper like having an angle range of 30 degree to 80 degree from a horizontal surface, and a second conductive film over said organic film including Si and connected to said first conductive film through said contact hole, wherein a lower side edge portion of an inner surface of the organic film including Si is intersected with an upper side edge portion of an inner surface of the inorganic insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 19, 23)
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7. A semiconductor device comprising:
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a substrate; a source region and a drain region which are provided over said substrate with a channel region over said substrate between said source region and said drain region; a gate electrode over said substrate and adjacent to said channel region with a gate insulating film between said gate electrode and said channel region; a first conductive film over and connected with one of said source region and said drain region; an inorganic insulating film over said first conductive film; an organic film including Si over said inorganic insulating film; a contact hole through said inorganic insulating film and said organic film including Si, wherein an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole is taper like having an angle range of 30 degree to 80 degree from a horizontal surface, and a second conductive film over said organic film including Si and connected to said first conductive film through said contact hole, wherein a lower side edge portion of an inner surface of the organic film including Si is intersected with an upper side edge portion of an inner surface of the inorganic insulating film. - View Dependent Claims (8, 9, 20, 24)
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10. A semiconductor device comprising:
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a first conductive film over a substrate; an inorganic insulating film over said first conductive film; an organic film including Si over said inorganic insulating film; a contact hole through said inorganic insulating film and said organic film including Si, wherein an edge portion of said organic film including Si that comes in contact with said inorganic insulating film has an angle range of 50 degree to 90 degree from a horizontal surface, and a second conductive film over said organic film including Si and connected to said first conductive film through said contact hole, wherein a lower side edge portion of an inner surface of the organic film including Si is intersected with an upper side edge portion of an inner surface of the inorganic insulating film. - View Dependent Claims (11, 12, 13, 14, 15, 21, 25)
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16. A semiconductor device comprising:
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a substrate; a source region and a drain region which are provided over said substrate with a channel region over said substrate between said source region and said drain region; a gate electrode over said substrate and adjacent to said channel region with a gate insulating film between said gate electrode and said channel region; a first conductive film over and connected with one of said source region and said drain region; an inorganic insulating film over said first conductive film; an organic film including Si over said inorganic insulating film; a contact hole through said inorganic insulating film and said organic film including Si, wherein an edge portion of said organic film including Si that comes in contact with said inorganic insulating film has an angle range of 50 degree to 90 degree from a horizontal surface, and a second conductive film over said organic film including Si and connected to said first conductive film through said contact hole, wherein a lower side edge portion of an inner surface of the organic film including Si is intersected with an upper side edge portion of an inner surface of the inorganic insulating film. - View Dependent Claims (17, 18, 22, 26)
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Specification