Nitride semiconductor light emitting device
First Claim
1. A nitride semiconductor light emitting device comprising:
- a substrate made of SiC;
a first light reflection layer provided on the substrate, the first light reflection layer being formed by laminating alternately a low refractivity layer and a high refractivity layer which has a higher refractivity than a refractivity of the low refractivity layer; and
a light emitting layer forming portion provided on the first light reflection layer,wherein the low refractivity layer of the first light reflection layer is formed with a single layer structure of an Alx,Ga1−
xN (0<
x<
1) layer, and the high refractivity layer of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−
yN (0≦
y≦
0.5 and y<
x) layer and an InuGa1−
uN (0<
u≦
1) layer, wherein one of the low refractivity layers is in contact with one of the high refractivity layers, and the one of the high refractivity layers is in contact with another of the low refractivity layers.
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Accused Products
Abstract
There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1−xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−yN layer (0≦y≦0.5 and y<x) or an IntGa1−tN layer (0<t≦0.5) and an InuGa1−uN layer (0<u≦1 and t<u).
25 Citations
8 Claims
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1. A nitride semiconductor light emitting device comprising:
-
a substrate made of SiC; a first light reflection layer provided on the substrate, the first light reflection layer being formed by laminating alternately a low refractivity layer and a high refractivity layer which has a higher refractivity than a refractivity of the low refractivity layer; and a light emitting layer forming portion provided on the first light reflection layer, wherein the low refractivity layer of the first light reflection layer is formed with a single layer structure of an Alx,Ga1−
xN (0<
x<
1) layer, and the high refractivity layer of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−
yN (0≦
y≦
0.5 and y<
x) layer and an InuGa1−
uN (0<
u≦
1) layer, wherein one of the low refractivity layers is in contact with one of the high refractivity layers, and the one of the high refractivity layers is in contact with another of the low refractivity layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification