Optoelectronic semiconductor component

• US 8,093,607 B2
• Filed: 04/25/2007
• Issued: 01/10/2012
• Est. Priority Date: 04/25/2006
• Status: Expired due to Fees

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Eichler, Christoph, Miller, Stephan, Strauss, Uwe, Härle, Volker, Sabathil, Matthias
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): Kuo, Wensing
• Application Number:
  US12/298,703
• Publication Number:
  US 20090309113A1
• Time in Patent Office: 1,721 Days
• Field of Search: 257/98, 257/E33.069
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/465 with a resonant cavity structure

Abstract

An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.

Claims

1. An optoelectronic semiconductor component, comprising:

a carrier substrate;

an interlayer that mediates adhesion between the carrier substrate and a component structure, wherein the component structure comprises an active layer provided for generating radiation;

a useful layer arranged between the interlayer and the active layer, wherein the useful layer has a separating area remote from the carrier substrate;

a coupling-out mirror arranged on that side of the component structure which is remote from the interlayer; and

a contact layer comprising a transparent conductive oxide that is arranged between the component structure and the coupling-out mirror, wherein the following relationship is fulfilled;

d=(mλ

/2)/n_KS,

wherein d is the thickness of the contact layer, λ

is the wavelength of the electromagnetic radiation generated in the active layer, n_KS is the refractive index of the material of the contact layer, and m is a natural number.

2. The optoelectronic component as claim in claim 1, wherein the interlayer is at least partly transmissive to the electromagnetic radiation generated in the active layer.

3. The optoelectronic semiconductor component as claimed in claim 2, wherein the interlayer contains a transparent conductive oxide.

4. The optoelectronic semiconductor component as claimed in claim 1, wherein the refractive index of the interlayer is approximately equal to the refractive index of the material from which the useful layer is formed, and/or approximately equal to the refractive index of the material from which the carrier substrate is formed.

5. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer has a refractive index that is lower than the refractive index of the material from which the useful layer is formed.

6. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer contains at least one of the following materials:

SiO₂, Al₂O₃, Ta₂O₅, HfO₂.

7. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer is electrically insulating.

8. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer comprises or is a dielectric mirror.

9. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer comprises or is a Bragg mirror.

10. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer is a bonding layer.

11. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer mediates an electrical contact between the carrier substrate and the component structure.

12. The optoelectronic semiconductor component as claimed in claim 1, wherein the distance between the interlayer and the coupling-out mirror is at most 10 μ

m.