Electrically conductive interconnect system and method

• US 8,093,729 B2
• Filed: 07/16/2007
• Issued: 01/10/2012
• Est. Priority Date: 06/14/2005
• Status: Expired due to Fees

• Current Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Original Assignee: Cufer Asset Ltd LLC (Intellectual Ventures LLC)
• Inventors: Trezza, John
• Primary Examiner(s): Warren, Matthew E
• Application Number:
  US11/778,461
• Publication Number:
  US 20080171174A1
• Time in Patent Office: 1,639 Days
• Field of Search: 257/737, 257/750, 257/751, 257/767, 257/780, 257/781, 257/E23.021, 257/E23.024, 257/E23.025
• US Class Current: 257/781
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05026 the internal layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/0508 being stacked
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/0615 : Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/13012 : in top view
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13609 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/75305 : comprising protrusions
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8121 : using a reflow oven
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06524 : Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06527 : Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 2225/06593 : Mounting aids permanently on device; arrangements for alignment
• CPC Class Codes: H01L 2225/06596 : Structural arrangements for testing
• CPC Class Codes: H01L 23/427 : Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 23/48 : Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: Y10T 428/24174 : including sheet or component perpendicular to plane of web or sheet

Abstract

An electrically conductive interconnect system has a post, extending above a supporting surface, the post including a rigid material, a coating on the rigid material, wherein the post and has a first width at the supporting surface and a second width at a distance removed from the supporting surface, and the post narrows from the first width to the second width. A method of electrically connecting a portion of a first supporting surface to a portion of a second supporting surface involves bringing a post on the first supporting surface into contact with an electrically conductive material located on the second supporting surface, softening the electrically conductive material, causing a separation distance between the first supporting surface and the second supporting distance to decrease so that a portion of the post will be surrounded by the electrically conductive material, and allowing the temperature of the electrically conductive material to decrease.

Claims

1. An interconnect for electrically connecting integrated circuit chips, the interconnect comprising:

a post extending above a first supporting surface of an integrated circuit chip, wherein the post includes;

a rigid material comprising an end portion opposite the first supporting surface;

a first electrically-conductive coating adhered to the rigid material and positioned over the end portion; and

a second electrically-conductive coating adhered to the first coating and positioned over the end portion; and

an electrically-conductive material surrounding at least a portion of the post and positioned over the end portion of the rigid material, wherein the electrically-conductive material comprises a malleable material that is more malleable than the rigid material, and wherein the electrically-conductive material is different than the second electrically-conductive coating;

wherein the post has a first portion having a first width at the first supporting surface and a second portion having a second width at a distance from the first supporting surface, and wherein the second width is less than the first width.

2. The interconnect of claim 1, wherein the post is one of a plurality of posts for the integrated circuit chip.

3. The interconnect of claim 2, wherein the post is spaced apart from an adjacent post by a distance of 50 μ

m or less.

4. The interconnect of claim 1, wherein the first width is larger than a height of the post.

5. The interconnect of claim 1, wherein the first width is smaller than a height of the post.

6. The interconnect of claim 1, wherein the post is located on an electrically-conductive pad.

7. The interconnect of claim 1, wherein the post further comprises a third portion having a third width located between the first portion and the second portion that is greater than the first and second widths.

8. The interconnect of claim 7, wherein the electrically-conductive pad has a width, and wherein the width of the electrically-conductive pad is greater than the third width.

9. The interconnect of claim 7, wherein the electrically-conductive pad has a width, and wherein the width of the electrically-conductive pad equals the third width.

10. The interconnect of claim 1, wherein the post comprises at least one lateral extension, and wherein the lateral extension increases a lateral surface area of the post.

11. The interconnect of claim 1, wherein the post has a pyramidal shape.

12. The interconnect of claim 1, wherein the post has a circular, oval, hexagonal, cross, square, or rectangular cross-sectional shape.

13. The interconnect of claim 1, wherein the post has an asymmetric or elongated cross-sectional shape.

14. The interconnect of claim 1, wherein the electrically-conductive material forms an electrical connection with the post.

15. The interconnect of claim 14, wherein the electrically-conductive material extends from a second supporting surface.

16. The interconnect of claim 15, wherein the first and second supporting surfaces are separated by a distance less than the sum of a height of the post and a height of the electrically-conductive material prior to forming the electrical connection.

17. The interconnect of claim 15, wherein the first supporting surface is coplanar with the second supporting surface.

18. The interconnect of claim 15, wherein the first supporting surface is not coplanar with the second supporting surface.

19. The interconnect of claim 14, wherein the electrically-conductive material is configured to bond to the post at a temperature between 240°

C. and 270°

C.

20. The interconnect of claim 14, wherein the electrically-conductive material comprises a gold-tin alloy, a silver-tin alloy, or a lead-tin alloy.

21. The interconnect of claim 1, wherein the rigid material is copper.

22. The interconnect of claim 21, wherein the electrically-conductive material extends from a second supporting surface, and wherein the electrically-conductive material forms an electrical connection with the post.

23. The interconnect of claim 1, wherein the rigid material is nickel.

24. The interconnect of claim 1, wherein the first coating comprises nickel.

25. The interconnect of claim 1, wherein the post is one of at least 400 posts of the integrated circuit chip.

26. The interconnect of claim 1, wherein the second coating comprises gold.

27. The interconnect of claim 1, wherein the post is configured for penetration into a malleable contact of another integrated circuit chip, and wherein the malleable contact comprises the malleable material that is more malleable than the rigid material.

28. The interconnect of claim 27, wherein the post further comprises a third portion having a third width located between the first portion and the second portion that is greater than the first and second widths.

29. The interconnect of claim 28, wherein the post is further configured such that upon penetration into the malleable contact a portion of the malleable contact is located between the third portion and the first supporting surface to strengthen the connection between the post and the malleable contact.

30. An interconnect for electrically connecting integrated circuit chips, the interconnect comprising:

a post extending above a first supporting surface of an integrated circuit chip, wherein the post includes a rigid material, a first electrically-conductive coating adhered to the rigid material, and a second electrically-conductive coating adhered to the first electrically-conductive coating;

an electrically-conductive material disposed over an end portion of the post and over the second-electrically-conductive material, wherein the electrically-conductive material comprises a malleable material that is more malleable than the rigid material, and wherein the electrically-conductive material is different than the first and second electrically-conductive coatings; and

an electrically-conductive path between the post and the electrically-conductive material;

wherein the post has a first portion having a first width at the first supporting surface and a second portion having a second width at a distance from the first supporting surface, and wherein the second width is less than the first width.

31. The interconnect of claim 30, wherein the first electrically-conductive coating comprises nickel or gold.

32. The interconnect of claim 30, wherein the post is one of a plurality of posts.

33. The interconnect of claim 32, wherein the post is spaced apart from an adjacent post by a distance of 50 μ

m or less.

34. The interconnect of claim 32, wherein the plurality of posts are symmetrically spaced around a zero-stress point.

35. The interconnect of claim 34, wherein each post of the plurality of posts has an asymmetric or elongated cross-sectional shape configured to absorb strain in a specific direction.

36. The interconnect of claim 30, wherein a portion of the electrically-conductive path extends through at least a portion of the first supporting surface.

37. The interconnect of claim 30, wherein the post is located on an electrically-conductive pad.

38. The interconnect of claim 30, wherein the post further comprises a third portion having a third width located between the first portion and the second portion that is greater than the first and second widths.

39. The interconnect of claim 38, wherein the electrically-conductive pad has a width, and wherein the width of the electrically-conductive pad equals the third width.

40. The interconnect of claim 38, wherein the electrically-conductive pad has a width, and wherein the width of the electrically-conductive pad is greater than the third width.

41. The interconnect of claim 30, wherein the post comprises at least one lateral extension.

42. The interconnect of claim 30, wherein the post has a pyramidal shape.

43. The interconnect of claim 30, wherein the post has a circular, oval, hexagonal, cross, square, or rectangular cross-sectional shape.

44. The interconnect of claim 30, wherein the post has an asymmetric or elongated cross-sectional shape configured to absorb strain in a specific direction.

45. The interconnect of claim 30, wherein the electrically-conductive material extends from a second supporting surface.

46. The interconnect of claim 45, wherein the first and second supporting surfaces are separated by a distance less than the sum of a height of the post and a height of the electrically-conductive material prior to forming the electrical connection.

47. The interconnect of claim 45, wherein the first supporting surface is coplanar with the second supporting surface.

48. The interconnect of claim 45, wherein the first supporting surface is not coplanar with the second supporting surface.

49. The interconnect of claim 30, wherein the electrically-conductive material is configured to bond to the post at a temperature between 240°

C. and 270°

C.

50. The interconnect of claim 30, wherein the electrically-conductive material comprises a gold-tin alloy, a silver-tin alloy, or a lead-tin alloy.