Power-on reset signal generation circuit of semiconductor memory apparatus

• US 8,093,932 B2
• Filed: 12/31/2009
• Issued: 01/10/2012
• Est. Priority Date: 11/30/2009
• Status: Active Grant

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Kwon, Jae Kwan, Chung, Sang Hwa
• Primary Examiner(s): Donovan, Lincoln
• Assistant Examiner(s): ROJAS, DANIEL E
• Application Number:
  US12/650,954
• Publication Number:
  US 20110128053A1
• Time in Patent Office: 740 Days
• Field of Search: None
• US Class Current: 327/143
• CPC Class Codes: H03K 17/22 Modifications for ensuring a predetermined initial state when the supply voltage has been applied bi-stable generators H03K3/12

Abstract

A power-on reset signal generation circuit of a semiconductor memory apparatus includes an external voltage level detector configured to detect an external voltage and generate an external voltage detection signal; a band gap voltage generation unit configured to generate a band gap voltage in response to the external voltage detection signal; a level detection voltage dividing unit configured to divide the external voltage depending upon a level of the band gap voltage and generate a division voltage; and a power-on reset signal generation unit configured to compare the level of the band gap voltage with a level of the division voltage and generate a power-on reset signal.

Claims

1. A power-on reset signal generation circuit of a semiconductor memory apparatus, comprising:

an external voltage level detector configured to detect an external voltage and generate an external voltage detection signal;

a band gap voltage generation unit configured to generate a band gap voltage in response to the external voltage detection signal;

a level detection voltage dividing unit configured to divide the external voltage depending upon a level of the band gap voltage and generate a division voltage; and

a power-on reset signal generation unit configured to compare the level of the band gap voltage with a level of the division voltage and generate a power-on reset signal,

wherein the level detection voltage dividing unit comprises;

a band gap voltage level detector configured to detect the level of the band gap voltage and generate a band gap detection signal;

a voltage transfer switching section configured to output the external voltage as a transfer voltage in response to the band gap detection signal; and

a voltage dividing section configured to divide the transfer voltage and generate the division voltage,

wherein the band gap voltage level detector comprises;

a voltage dropping part configured to drop the level of the band gap voltage and generate a drop voltage;

a level detecting part configured to generate a drop detection signal in response to a level of the drop voltage; and

a driving part configured to drive the drop detection signal and output it as the band gap detection signal; and

wherein the level detecting part is configured to be applied with the band gap voltage to its positive power supply terminal and enable the drop detection signal when the drop voltage is higher than a target level.

2. The power-on reset signal generation circuit according to claim 1, wherein the band gap voltage level detector is configured to enable the band gap detection signal when the band gap voltage has a voltage level higher than a target level.

3. The power-on reset signal generation circuit according to claim 1, wherein the voltage dropping part substantially maintains a difference between the levels of the band gap voltage and the drop voltage.

4. The power-on reset signal generation circuit according to claim 1, wherein the voltage transfer switching section is configured to output the external voltage as the transfer voltage when the band gap detection signal is enabled, and suppress the external voltage from being outputted as the transfer voltage when the band gap detection signal is disabled.

5. The power-on reset signal generation circuit according to claim 1, wherein the power-on reset signal generation unit is configured to enable the power-on reset signal when the level of the band gap voltage is higher than the level of the division voltage, and disable the power-on reset signal when the level of the band gap voltage is lower than the level of the division voltage.

6. The power-on reset signal generation circuit according to claim 1, wherein the external voltage level detector is configured to enable the external voltage detection signal when a level of the external voltage is higher than a target level, and generate the band gap voltage when the external voltage detection signal is enabled.

7. A power-on reset signal generation circuit of a semiconductor memory apparatus, comprising:

a voltage dividing unit configured to divide an external voltage and generate a division voltage; and

a power-on reset signal generation unit configured to compare a level of a band gap voltage with a level of division voltage and generate a power-on reset signal when an enable signal is enabled and the level of the band gap voltage is higher than a target level,

wherein the power on reset signal generation unit comprises;

an activation control unit configured to connect a ground terminal to a sink node when the enable signal is enabled and the level of the band gap voltage is higher than the target level;

a first switching unit configured to connect the sink node to an output node when the ground terminal is connected to the sink node and the level of the band gap voltage is higher than the level of the division voltage; and

a second switching unit configured to connect the external voltage to the output node when the ground terminal is connected to the sink node and the level of the band gap voltage is higher than the level of the division voltage.