Nuclear voltaic cell

• US 8,094,771 B2
• Filed: 11/21/2003
• Issued: 01/10/2012
• Est. Priority Date: 11/21/2003
• Status: Active Grant

• Current Assignee: Global Technologies, Inc.
• Original Assignee: Global Technologies, Inc.
• Inventors: Tsang, Francis Yu-Hei, Juergens, Tristan Dieter, Harker, Yale Deon, Kwok, Kwan Sze, Newman, Nathan, Ploger, Scott Arden
• Primary Examiner(s): PALABRICA, RICARDO J
• Application Number:
  US10/720,035
• Publication Number:
  US 20110274233A1
• Time in Patent Office: 2,972 Days
• Field of Search: 376/317, 376320-323, 136/202, 429/111, 429/11, 310300-305, 322/88
• US Class Current: 376/320
• CPC Class Codes: G21H 1/04 Cells using secondary emission induced by alpha radiation, beta radiation, or gamma radiation

Abstract

The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.

Claims

1. A nuclear voltaic cell configured to generate an electrical current, comprising:

a first metal contact layer having a first side;

a second metal contact layer having a first side, wherein said first side of said second metal contact layer is positioned facing said first side of said first metal contact layer and forms a channel between said first and second metal contact layers;

a liquid semiconductor located within said channel and in contact with said first side of said first metal contact layer and in contact with said first side of said second metal contact layer, wherein said liquid semiconductor contains a radioactive isotope in solution and said first side of said first metal contact layer forms a Schottky contact with said liquid semiconductor, and said first side of said second metal contact layer forms a low resistance or ohmic contact with said liquid semiconductor, and wherein said liquid semiconductor comprises at least one chalcogen, said chalcogen selected from the group consisting essentially of sulfur, selenium and tellurium; and

an electrical circuit connecting said first metal contact layer to said second metal contact layer.

2. A nuclear voltaic cell according to claim 1 further comprising:

an electrical load connected to said electrical circuit, wherein electrical power is generated when said electrical load is connected to said electrical circuit.

3. A nuclear voltaic cell according to claim 1, wherein said liquid semiconductor is a p-type semiconductor.

4. A nuclear voltaic cell according to claim 1, further comprising:

a plurality of nonconductive spacers abutted between said first side of said first metal contact layer and said first side of said second metal contact layer to maintain said channel between said first and second metal contact layers, wherein with said liquid semiconductor within said channel surrounds said plurality of nonconductive spacers.

5. A nuclear voltaic cell according to claim 1, wherein said liquid semiconductor flows through said channel between said first metal contact layer and said second metal contact layer.

6. A nuclear voltaic cell according to claim 1, further comprising:

a mandrel, wherein said first metal contact layer and said second metal contact layer with said channel therebetween are wound around said mandrel to form the cell.

7. A nuclear voltaic cell according to claim 1, further comprising at least one nonconductive spacer situated between said first side of said first metal contact layer and said first side of said second metal contact layer to maintain said channel between said first and second metal contact layers.

8. A nuclear voltaic cell according to claim 1, wherein said liquid semiconductor comprises selenium.

9. A nuclear voltaic cell according to claim 1, wherein said liquid semiconductor is a mixture comprising said chalcogen.

10. A nuclear voltaic cell according to claim 1, wherein said liquid semiconductor is an alloy comprising said at least one chalcogen and a metal.