×

Sensor device with reduced parasitic-induced error

  • US 8,096,179 B2
  • Filed: 04/09/2009
  • Issued: 01/17/2012
  • Est. Priority Date: 04/09/2009
  • Status: Active Grant
First Claim
Patent Images

1. A device comprising:

  • a sensor element having a first drive node and a first sense node, wherein a first parasitic current is present between said first drive node and said first sense node when a drive signal is applied at said first drive node; and

    a capacitive network having a first input coupled to a voltage source and a first output coupled to said first sense node, said first capacitive network substantially canceling said first parasitic current when a second drive signal of opposite phase to said first drive signal is applied at said first input.

View all claims
  • 27 Assignments
Timeline View
Assignment View
    ×
    ×