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Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

  • US 8,097,482 B2
  • Filed: 06/03/2008
  • Issued: 01/17/2012
  • Est. Priority Date: 06/11/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a Group III nitride semiconductor, comprisinga sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on said substrate by a reactive sputtering method, whereinsaid sputtering step includes respective substeps of:

  • a film formation step for forming a semiconductor thin film while doping with Mg; and

    a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, andthe Group III nitride semiconductor is formed by laminating said semiconductor thin film through alternate repetitions of said film formation step and said plasma treatment step.

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