Semiconductor light emitting device and method of manufacturing the same
First Claim
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1. A method of manufacturing a light emitting device comprising:
- forming a reflection layer on a substrate;
forming a transparent insulating layer on the reflection layer;
forming a plurality of holes in the reflection layer and the transparent insulating layer;
forming an individual light emitting cell in each of the holes, by stacking semiconductor material layers therein; and
forming a transparent electrode covering the light emitting cells opposite the reflection layer,wherein the reflection layer is formed on an entire area of the substrate between the light emitting cells.
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Abstract
Provided is a semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes a substrate, at least two light emitting cells located on the substrate and formed by stacking semiconductor material layers, a reflection layer and a transparent insulating layer sequentially stacked between the light emitting cells, and a transparent electrode covering the upper surface of the light emitting cells.
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Citations
24 Claims
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1. A method of manufacturing a light emitting device comprising:
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forming a reflection layer on a substrate; forming a transparent insulating layer on the reflection layer; forming a plurality of holes in the reflection layer and the transparent insulating layer; forming an individual light emitting cell in each of the holes, by stacking semiconductor material layers therein; and forming a transparent electrode covering the light emitting cells opposite the reflection layer, wherein the reflection layer is formed on an entire area of the substrate between the light emitting cells. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a light emitting device comprising:
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forming a transparent insulating layer on a substrate; forming at least one hole in the transparent insulating layer; forming a light emitting cell in the hole by stacking semiconductor material layers; and forming a transparent electrode covering the light emitting cell, wherein the forming of the transparent insulating layer on the substrate further comprises forming a reflection layer between the substrate and the transparent insulating layer, and the forming of at least one hole in the transparent insulating layer comprises forming holes in the transparent insulating layer and the reflection layer until the substrate is exposed. - View Dependent Claims (15, 18, 19, 20, 21, 22, 23, 24)
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16. A method of manufacturing a light emitting device comprising:
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forming a transparent insulating layer on a substrate; forming at least one hole in the transparent insulating layer; forming a light emitting cell in the hole by stacking semiconductor material layers; and forming a transparent electrode covering the light emitting cell, wherein the forming of the transparent insulating layer on a substrate further comprises sequentially forming a GaN layer and a reflection layer between the substrate and the transparent insulating layer, and the forming of at least one hole in the transparent insulating layer comprises forming holes in the transparent insulating layer and the reflection layer until the GaN layer is exposed. - View Dependent Claims (17)
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Specification