Method of forming lateral trench gate FET with direct source-drain current path

• US 8,097,510 B2
• Filed: 09/27/2010
• Issued: 01/17/2012
• Est. Priority Date: 06/29/2006
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Jeon, Chang-ki, Dolny, Gary
• Primary Examiner(s): Smith, Zandra V.
• Assistant Examiner(s): Anya, Igwe U
• Application Number:
  US12/890,947
• Publication Number:
  US 20110014760A1
• Time in Patent Office: 477 Days
• Field of Search: 257/343, 257/E29.027, 257/E21.41, 438/269
• US Class Current: 438/269
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/7825 with trench gate electrode trench gate electrodes per se H01L29/4236

Abstract

A method of forming a field effect transistor (FET) includes: forming a drift region comprising a stack of alternating conductivity type silicon layers; forming a drain region of a first conductivity type extending into the stack of alternating conductivity type silicon layers; forming a trench gate extending into the stack of alternating conductivity type silicon layers, the trench gate having a non-active sidewall and an active sidewall being perpendicular to one another; and forming a body region of a second conductivity type adjacent to the active sidewall of the trench gate, wherein the trench gate and the drain region are formed such that the non-active sidewall of the trench gate faces the drain region.

Claims

1. A method of forming a field effect transistor (FET) comprising:

forming a drift region comprising a stack of alternating conductivity type silicon layers;

forming a drain region of a first conductivity type extending into the stack of alternating conductivity type silicon layers;

forming a trench gate extending into the stack of alternating conductivity type silicon layers, the trench gate having a vertically extending non-active sidewall and a vertically extending active sidewall being perpendicular to one another; and

forming a body region of a second conductivity type adjacent to the active sidewall of the trench gate, wherein the trench gate and the drain region are formed such that the non-active sidewall of the trench gate faces the drain region and the body region extends along the active sidewall but not the non-active sidewall.

2. The method of claim 1 further comprising:

forming a source region of the first conductivity type in the body region such that a channel region is formed in the body region between an outer perimeter of the source region and an outer perimeter of the body region.

3. The method of claim 2 further comprising:

forming an interconnect layer including a source interconnect portion electrically contacting the source region and a drain interconnect portion electrically contacting the drain region.

4. The method of claim 3 further comprising:

forming a dielectric layer lining the active sidewall, the non-active sidewall, and a bottom of the trench gate; and

forming a gate electrode at least partially filling the trench gate.

5. The method of claim 4 wherein the step of forming a dielectric layer comprises:

forming a bottom dielectric layer along the bottom of the trench gate; and

forming a sidewall dielectric along the active sidewall and the non-active sidewall of the trench gate, the bottom dielectric being thicker than the sidewall dielectric.

6. The method of claim 2 further comprising:

forming a heavy body region adjacent to the source region.

7. The method of claim 6 wherein the stack of alternating conductivity type silicon layers is formed over a substrate of a second conductivity type, the heavy body region being formed so as to vertically extend through the stack of alternating conductivity type silicon layers and terminate within the substrate.

8. The method of claim 6 wherein the heavy body region is formed so as to vertically extend through the stack of alternating conductivity type silicon layers and electrically short those silicon layers of the stack having the second conductivity type.

9. The method of claim 1 wherein the stack of alternating conductivity type silicon layers is formed such that those silicon layers of the stack having a second conductivity type are laterally spaced from the sidewalls of the trench gate so as not to extend beneath the body region.

10. The method of claim 1 wherein the stack of alternating conductivity type silicon layers is formed such that those silicon layers of the stack having a second conductivity type do not extend beneath the body region.

11. The method of claim 1 wherein the drain region is formed so as to vertically extend through the stack of alternating conductivity type silicon layers and electrically short those silicon layers of the stack having the first conductivity type.

12. The method of claim 1 wherein the stack of alternating conductivity type silicon layers is formed over a substrate of the second conductivity type, the drain region being formed so as to vertically extend through the stack of alternating conductivity type silicon layers and terminate within the substrate.

13. The method of claim 1 wherein the step of forming a drift region comprises:

forming an epitaxial layer of the first conductivity over a substrate of a second conductivity type; and

implanting dopants of a second conductivity type into the epitaxial layer so as to convert an upper region of the epitaxial layer to the second conductivity type.

14. The method of claim 1 wherein the step of forming a drift region comprises:

forming an epitaxial layer of the first conductivity over a substrate of a second conductivity type; and

forming a second epitaxial layer of the second conductivity over the first epitaxial layer.

15. The method of claim 1 wherein the step of forming a drift region comprises:

forming an epitaxial layer over a substrate of a second conductivity type;

implanting dopants of the first conductivity type into the epitaxial layer so as to convert a lower portion of the epitaxial layer to the first conductivity type; and

implanting dopants of the second conductivity type into the epitaxial layer so as to convert an upper portion of the epitaxial layer to the second conductivity type.