Particle-optical systems and arrangements and particle-optical components for such systems and arrangements

• US 8,097,847 B2
• Filed: 06/25/2009
• Issued: 01/17/2012
• Est. Priority Date: 09/05/2003
• Status: Active Grant

• Current Assignee: Applied Materials Israel Limited (Applied Materials Incorporated), Carl Zeiss Microscopy GmbH (Carl-Zeiss-Stiftung)
• Original Assignee: Applied Materials Israel Limited (Applied Materials Incorporated), Carl Ziess SMT AG
• Inventors: Knippelmeyer, Rainer, Kienzle, Oliver, Kemen, Thomas, Mueller, Heiko, Uhlemann, Stephan, Haider, Maximilian, Casares, Antonio
• Primary Examiner(s): Souw, Bernard E
• Application Number:
  US12/459,078
• Publication Number:
  US 20100181479A1
• Time in Patent Office: 936 Days
• Field of Search: 250/306, 250/307, 250309-311, 250/396.R, 250/396.ML, 250/492.1, 250/492.2, 250/492.3, 250/492.22
• US Class Current: 250/309
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/0435 Multi-aperture
• CPC Class Codes: H01J 2237/0453 multiple apertures
• CPC Class Codes: H01J 2237/047 Changing particle velocity
• CPC Class Codes: H01J 2237/04735 with electrostatic means
• CPC Class Codes: H01J 2237/04756 with electrostatic means
• CPC Class Codes: H01J 2237/06 Sources
• CPC Class Codes: H01J 2237/14 magnetic
• CPC Class Codes: H01J 2237/2817 Pattern inspection
• CPC Class Codes: H01J 2237/31774 Multi-beam
• CPC Class Codes: H01J 37/04 Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement electron or ion-optical systems for localised treatment of materials H01J37/3007; discharge control means in gas filled discharge tubes H01J37/32009
• CPC Class Codes: H01J 37/09 Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
• CPC Class Codes: H01J 37/10 Lenses
• CPC Class Codes: H01J 37/14 magnetic
• CPC Class Codes: H01J 37/153 Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence
• CPC Class Codes: H01J 37/3007 Electron or ion-optical systems electron or ion-optical details H01J37/06 - H01J37/153
• CPC Class Codes: H01J 37/3177 Multi-beam, e.g. fly's eye, comb probe

Abstract

A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.

Claims

1. A particle-optical arrangement, comprising:

at least one charged-particle source for generating at least one beam of charged particles;

at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures are arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the at least one beam of charged particles downstream of the aperture plate;

a first voltage supply for supplying predetermined first voltages to the plurality of apertures;

a first single-aperture plate arranged at a distance upstream or downstream of the multi-aperture plate, the first single-aperture plate having a single aperture for allowing the beam of charged particles or the plurality of charged-particle beamlets to pass therethrough; and

a second voltage supply for supplying a predetermined second voltage to the first single-aperture plate;

wherein at least one of the following conditions is fulfilled;

(1) the distance between the multi-aperture plate and the first single-aperture plate is less than five times a diameter of the single aperture of the first single-aperture plate;

(2) the distance between the multi-aperture plate and the first single-aperture plate is less than 75 mm;

(3) the distance between the multi-aperture plate and the first single-aperture plate is selected such that it is less than one half of an average focal length of the apertures of the multi aperture plate; and

(4) the distance between the multi-aperture plate and the first single-aperture plate is selected such that an average electrical field on a surface of the multi aperture plate at a center thereof is higher than at least one of 100 V/mm, 200 V/mm, 300 V/mm, 500 V/mm, and 1 kV/mm.

2. The particle-optical arrangement according to claim 1, further comprising:

a second single-aperture plate arranged in between the multi-aperture plate and the first single-aperture plate and substantially parallel thereto; and

a third voltage supply for supplying a predetermined third voltage to the second single-aperture plate;

wherein one of the following conditions is fulfilled;

the third voltage is below or equal to the first voltage, and

the third voltage is in between the second voltage and the first voltage.

3. The particle-optical arrangement according to claim 1, further comprising:

a third single-aperture plate arranged at a distance from the multi-aperture plate and substantially parallel thereto, wherein the multi-aperture plate is positioned in between of the first and third single-aperture plates, the third single-aperture plate having a single aperture for allowing the beam of charged particles or the plurality of charged-particle beamlets to pass therethrough; and

a fourth voltage supply for supplying a predetermined fourth voltage to the third single-aperture plate;

wherein the distance between the multi-aperture plate and the third single-aperture plate is less than at least one of five times, four times, three times, two times, and one time a diameter of the single aperture of the third single-aperture plate.

4. The particle-optical arrangement according to claim 1, further comprising:

a stage for mounting an object to be inspected;

at least one electron source for generating at least one electron beam, wherein the at least one electron beam is shaped into an array of electron beamlets downstream of the multi aperture plate;

an objective lens for focusing the array of electron beamlets on the object to be inspected; and

a detector arrangement for detecting secondary electrons emanating from the object generated by the array of electron beamlets to produce a plurality of signals, wherein each signal of the plurality of signals corresponds to secondary electrons generated by substantially one single electron beamlet of the array of electron beamlets;

wherein the particle-optical arrangement is configured to be usable as a multi-electron-beamlet inspection system.

5. The particle-optical arrangement according to claim 1, further comprising:

a stage for mounting a resist coated object;

at least one charged-particle source for generating at least one charged-particle beam, wherein the at least one charged-particle beam is shaped into an array of charged-particle beamlets downstream of the multi aperture plate; and

an objective lens for focusing the array of charged-particle beamlets on the resist coated object;

wherein the particle-optical arrangement is configured to be usable as a multi-beamlet lithography system for writing a pattern on the resist coated object.

6. The particle-optical arrangement according to claim 2, further comprising:

a stage for mounting an object to be inspected;

at least one electron source for generating at least one electron beam, wherein the at least one electron beam is shaped into an array of electron beamlets downstream of the multi aperture plate;

an objective lens for focusing the array of electron beamlets on the object to be inspected; and

a detector arrangement for detecting secondary electrons emanating from the object generated by the array of electron beamlets to produce a plurality of signals, wherein each signal of the plurality of signals corresponds to secondary electrons generated by substantially one single electron beamlet of the array of electron beamlets;

wherein the particle-optical arrangement is configured to be usable as a multi-electron-beamlet inspection system.

7. The particle-optical arrangement according to claim 2, further comprising:

a stage for mounting a resist coated object;

at least one charged-particle source for generating at least one charged-particle beam, wherein the at least one charged-particle beam is shaped into an array of charged-particle beamlets downstream of the multi aperture plate; and

an objective lens for focusing the array of charged-particle beamlets on the resist coated object;

wherein the particle-optical arrangement is configured to be usable as a multi-beamlet lithography system for writing a pattern on the resist coated object.

8. The particle-optical arrangement according to claim 3, further comprising:

a stage for mounting an object to be inspected;

at least one electron source for generating at least one electron beam, wherein the at least one electron beam is shaped into an array of electron beamlets downstream of the multi aperture plate;

an objective lens for focusing the array of electron beamlets on the object to be inspected; and

a detector arrangement for detecting secondary electrons emanating from the object generated by the array of electron beamlets to produce a plurality of signals, wherein each signal of the plurality of signals corresponds to secondary electrons generated by substantially one single electron beamlet of the array of electron beamlets;

wherein the particle-optical arrangement is configured to be usable as a multi-electron-beamlet inspection system.

9. The particle-optical arrangement according to claim 3, further comprising:

a stage for mounting a resist coated object;

at least one charged-particle source for generating at least one charged-particle beam, wherein the at least one charged-particle beam is shaped into an array of charged-particle beamlets downstream of the multi aperture plate; and

an objective lens for focusing the array of charged-particle beamlets on the resist coated object;

wherein the particle-optical arrangement is configured to be usable as a multi-beamlet lithography system for writing a pattern on the resist coated object.

10. A particle-optical arrangement, comprising:

at least one charged-particle source for generating a beam of charged particles;

to at least one multi-aperture plate having a plurality of apertures formed in the plate, wherein the plurality of apertures are arranged in a first pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the aperture plate;

a first voltage supply for supplying predetermined first voltages to the plurality of apertures;

a first single-aperture plate arranged at a distance upstream or downstream of the multi-aperture plate, the first single-aperture plate having a single aperture for allowing the beam of charged particles or the plurality of charged-particle beamlets to pass therethrough;

a second voltage supply for supplying a predetermined second voltage to the first single-aperture plate;

a second single-aperture plate arranged in between the multi-aperture plate and the first single-aperture plate; and

a third voltage supply for supplying a predetermined third voltage different from the predetermined second voltage to the second single-aperture plate;

wherein an arrangement of the multi aperture plate and the first and second single-aperture plates and a setting of the first, second and third voltages is configured to generate an electrical field at a surface of the multi-aperture plate, wherein a change in the voltage supplied to the first single-aperture plate such that the third voltage is supplied to the first single-aperture plate will result in a change of a field strength of the electrical field of more than at least one of 1%, 5%, and 10%.

11. The particle-optical arrangement according to claim 10, further comprising:

a stage for mounting an object to be inspected;

at least one electron source for generating at least one electron beam, wherein the at least one electron beam is shaped into an array of electron beamlets downstream of the multi aperture plate;

an objective lens for focusing the array of electron beamlets on the object to be inspected; and

a detector arrangement for detecting secondary electrons emanating from the object generated by the array of electron beamlets to produce a plurality of signals, wherein each signal of the plurality of signals corresponds to secondary electrons generated by substantially one single electron beamlet of the array of electron beamlets;

wherein the particle-optical arrangement is configured to be usable as a multi-electron-beamlet inspection system.

12. The particle-optical arrangement according to claim 10, further comprising:

a stage for mounting a resist coated object;

at least one charged-particle source for generating at least one charged-particle beam, wherein the at least one charged-particle beam is shaped into an array of charged-particle beamlets downstream of the multi aperture plate; and

an objective lens for focusing the array of charged-particle beamlets on the resist coated object;

wherein the particle-optical arrangement is configured to be usable as a multi-beamlet lithography system for writing a pattern on the resist coated object.