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Variable resistive memory punchthrough access method

  • US 8,098,510 B2
  • Filed: 11/12/2010
  • Issued: 01/17/2012
  • Est. Priority Date: 10/30/2008
  • Status: Active Grant
First Claim
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1. A method comprising:

  • applying a voltage across a source region and a drain region of a metal-oxide-semiconductor field effect transistor that is sufficient to merge a source depletion region and a drain depletion region of the metal-oxide-semiconductor field effect transistor and conduct a write current through the metal-oxide-semiconductor field effect transistor;

    switching a variable resistive data cell from a high resistance state to a low resistance state by passing the write current through the variable resistive data cell in a first direction, the write current provided by the metal-oxide-semiconductor field effect transistor being electrically coupled to the variable resistive data cell.

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