Method of manufacturing ball grid array type semiconductor device
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- bonding a supporting substrate to a first surface of a semiconductor substrate on which a pad electrode is formed;
forming a via hole in the semiconductor substrate connecting a second surface of the semiconductor substrate and a surface of the pad electrode;
forming an insulation film on the second surface of the semiconductor substrate and an inside wall of the via hole;
removing the insulation film at a bottom portion of the via hole to expose the pad electrode in the via hole;
forming a wiring contacting the exposed pad electrode through the via hole and extending over the second surface from the via hole;
forming a conductive terminal on the wiring; and
dividing the semiconductor substrate so as not to cut through the via hole and so as to produce a semiconductor die having the via hole.
6 Assignments
0 Petitions
Accused Products
Abstract
A BGA type semiconductor device having high reliability is offered. A pad electrode is formed on a surface of a semiconductor substrate and a glass substrate is bonded to the surface of the semiconductor substrate. A via hole is formed from a back surface of the semiconductor substrate to reach a surface of the pad electrode. An insulation film is formed on an entire back surface of the semiconductor substrate including an inside of the via hole. A cushioning pad is formed on the insulation film. The insulation film is removed from a bottom portion of the via hole by etching. A wiring connected with the pad electrode is formed to extend from the via hole onto the cushioning pad. A conductive terminal is formed on the wiring. Then the semiconductor substrate is separated into a plurality of semiconductor dice.
33 Citations
14 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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bonding a supporting substrate to a first surface of a semiconductor substrate on which a pad electrode is formed; forming a via hole in the semiconductor substrate connecting a second surface of the semiconductor substrate and a surface of the pad electrode; forming an insulation film on the second surface of the semiconductor substrate and an inside wall of the via hole; removing the insulation film at a bottom portion of the via hole to expose the pad electrode in the via hole; forming a wiring contacting the exposed pad electrode through the via hole and extending over the second surface from the via hole; forming a conductive terminal on the wiring; and dividing the semiconductor substrate so as not to cut through the via hole and so as to produce a semiconductor die having the via hole. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device, comprising:
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bonding a supporting substrate to a first surface of a semiconductor substrate on which a pad electrode is formed; forming a via hole in the semiconductor substrate connecting a second surface of the semiconductor substrate and a surface of the pad electrode; forming an insulation film on the second surface of the semiconductor substrate and an inside wall of the via hole; removing the insulation film at a bottom portion of the via hole to expose the pad electrode in the via hole; forming a buried electrode in the via hole so that the buried electrode is in contact with the exposed pad electrode; forming a cushioning pad on the second surface; forming a wiring connected with the buried electrode and extending over the cushioning pad; forming a conductive terminal on the wiring; and dividing the semiconductor substrate so as not to cut through the via hole and so as to produce a semiconductor die having the via hole. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification