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Method of manufacturing ball grid array type semiconductor device

  • US 8,101,496 B2
  • Filed: 05/12/2010
  • Issued: 01/24/2012
  • Est. Priority Date: 06/09/2003
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • bonding a supporting substrate to a first surface of a semiconductor substrate on which a pad electrode is formed;

    forming a via hole in the semiconductor substrate connecting a second surface of the semiconductor substrate and a surface of the pad electrode;

    forming an insulation film on the second surface of the semiconductor substrate and an inside wall of the via hole;

    removing the insulation film at a bottom portion of the via hole to expose the pad electrode in the via hole;

    forming a wiring contacting the exposed pad electrode through the via hole and extending over the second surface from the via hole;

    forming a conductive terminal on the wiring; and

    dividing the semiconductor substrate so as not to cut through the via hole and so as to produce a semiconductor die having the via hole.

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