Silicon substrate and manufacturing method thereof
First Claim
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1. A method of manufacturing a first silicon substrate, comprising:
- a preparation step of growing a single crystal silicon that is doped with phosphorus (P) and has a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3 and an initial oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3 using a CZ method, and slicing the single crystal silicon;
a step of forming an n+ epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1019 atoms/cm3 on the sliced single crystal silicon; and
a step of forming a n epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1018 atoms/cm3 on the n+ epitaxial layer,wherein the thickness of the n+ epitaxial layer is greater than or equal to 0.2 μ
m and less than or equal to 0.6 μ
m, andthe thickness of the n epitaxial layer is greater than or equal to 2 μ
m and less than or equal to 10 μ
m.
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Abstract
A silicon substrate is manufactured from a single crystal silicon that is doped with phosphorus (P) and is grown by a CZ method to have a predetermined carbon concentration and a predetermined initial oxygen concentration. An n+ epitaxial layer or an n+ implantation layer that is doped with phosphorus (P) at a predetermined concentration or more is formed on the silicon substrate. An n epitaxial layer that is doped with phosphorus (P) at a predetermined concentration is formed on the n+ layer.
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Citations
4 Claims
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1. A method of manufacturing a first silicon substrate, comprising:
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a preparation step of growing a single crystal silicon that is doped with phosphorus (P) and has a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3 and an initial oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3 using a CZ method, and slicing the single crystal silicon;a step of forming an n+ epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1019 atoms/cm3 on the sliced single crystal silicon; anda step of forming a n epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1018 atoms/cm3 on the n+ epitaxial layer,wherein the thickness of the n+ epitaxial layer is greater than or equal to 0.2 μ
m and less than or equal to 0.6 μ
m, andthe thickness of the n epitaxial layer is greater than or equal to 2 μ
m and less than or equal to 10 μ
m.
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2. A method of manufacturing a second silicon substrate, comprising:
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a preparation step of growing a single crystal silicon that is doped with phosphorus (P) and has a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.6×
1017 atoms/cm3 and an initial oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3 using a CZ method, and slicing the single crystal silicon;an implantation step of implanting an n type dopant into the surface of the sliced single crystal silicon at a concentration that is greater than or equal to 1.0×
1018 atoms/cm3 to form an n+ implantation layer; andan epitaxial step of forming a n epitaxial layer that is doped with an n type dopant at a concentration greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3 on the n+ implantation layer,wherein the thickness of the n+ implantation layer is greater than or equal to 0.2 μ
m and less than or equal to 0.6 μ
m, andthe thickness of the n epitaxial layer is greater than or equal to 2 μ
m and less than or equal to 10 μ
m. - View Dependent Claims (3, 4)
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Specification