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Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor device

  • US 8,101,523 B2
  • Filed: 11/05/2010
  • Issued: 01/24/2012
  • Est. Priority Date: 02/27/2008
  • Status: Expired due to Fees
First Claim
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1. A method of producing nitride semiconductor devices comprising the steps of:

  • preparing a nitride semiconductor wafer which has a chamfered edge, a 0.5 μ

    m-10 μ

    m thick edge process-induced degradation layer with a deformed lattice structure remaining on the chamfered edge and a mirror-flat top surface;

    growing epitaxially nitride films on the nitride semiconductor wafer;

    forming electrodes; and

    dividing the wafer into device chips.

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