Nitride light emitting device and manufacturing method thereof

• US 8,101,960 B2
• Filed: 07/31/2006
• Issued: 01/24/2012
• Est. Priority Date: 08/01/2005
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Primary Examiner(s): Zarneke, David
• Application Number:
  US11/919,639
• Publication Number:
  US 20090028202A1
• Time in Patent Office: 2,003 Days
• Field of Search: 257/95, 257/99, 257/E33.05
• US Class Current: 257/95
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concave and/or convex portion.

Claims

1. A nitride light emitting device, comprising:

a light emitting structure including a first conduction type cladding layer, an active layer, and a second conduction type cladding layer;

a transparent electrode on the second conduction type cladding layer; and

an electrode on the transparent electrode,

wherein the second conduction type cladding layer has a pattern including at least one recess portion and at least one protrusion portion,

wherein a lower side of the at least one recess portion is closer to the active layer than to a bottom side of the electrode,

wherein the transparent electrode comprises a second pattern corresponding to the pattern of the second conduction type cladding layer,

wherein the transparent electrode comprises a substantially flat top surface,

wherein the transparent electrode is directly disposed on the at least one recess portion of the second conduction type cladding layer,

wherein the substantially flat top surface of the transparent electrode is higher than a top surface of the pattern of the second conduction type cladding layer, and

wherein the second conduction type cladding layer has a thickness of less than 150 nm.

2. The nitride light emitting device according to claim 1, comprising a third conduction type cladding layer formed on the second conduction type cladding layer.

3. The nitride light emitting device according to claim 2, wherein the first conduction type cladding layer and the third conduction type cladding layer are n-type cladding layers, and the second conduction type cladding layer is a p-type cladding layer.

4. The nitride light emitting device according to claim 2, wherein the third conduction type cladding layer has an upper surface formed in an uneven shape.

5. The nitride light emitting device according to claim 2, wherein the third conduction type cladding layer has a flat upper surface.

6. The nitride light emitting device according to claim 1, wherein the transparent electrode is formed of a metal oxide.

7. The nitride light emitting device according to claim 1, wherein the transparent electrode is formed of at least one material selected from the group consisting of ITO, IZO (In—

ZnO), GZO (Ga—

ZnO), AZO (Al—

ZnO), AGZnO (Al—

Ga ZnO), IGZO (In-Gz ZnO), and IrOx.

8. The nitride light emitting device according to claim 1, wherein the transparent electrode has a conductivity higher than a conductivity of the second conduction type cladding layer.

9. The nitride light emitting device according to claim 2, wherein the transparent electrode is on the third conduction type cladding layer.

10. The nitride light emitting device according to claim 1, further comprising a substrate under the light emitting structure.

11. The nitride light emitting device according to claim 1, wherein the transparent electrode is on the pattern.

12. The nitride light emitting device according to claim 1, wherein the transparent electrode fills with the pattern.

13. The nitride light emitting device according to claim 1, wherein the pattern is in the second conduction type cladding layer.

14. The nitride light emitting device according to claim 1,

wherein the at least one recess portion includes plural recess portions and the at least one protrusion portion includes plural protrusion portions, and

wherein a lower side of a majority of the plural recess portions is closer to the active layer than to the bottom side of the electrode.

15. The nitride light emitting device according to claim 1, wherein a top surface of the lighting emitting structure is substantially planar.

16. The nitride light emitting device according to claim 1, wherein the transparent electrode is between the electrode and the second conduction type cladding layer.

17. The nitride light emitting device according to claim 1, wherein a cross section of the pattern has a polygon shape.

18. The nitride light emitting device according to claim 1, wherein the at least one recess portion includes at least one concave portion and the at least one protrusion portion includes at least one convex portion.