Semiconductor device and method of fabricating the same

• US 8,101,987 B2
• Filed: 07/30/2010
• Issued: 01/24/2012
• Est. Priority Date: 06/03/2008
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Shih, Hui-Shen
• Primary Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US12/846,832
• Publication Number:
  US 20100289066A1
• Time in Patent Office: 543 Days
• Field of Search: 257313-316, 257/393, 257529-530, 257/E21.637, 257/23.111, 257/27.026, 257/29.004, 257/119, 257/295
• US Class Current: 257/313
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81C 1/00166 Electrodes

Abstract

A semiconductor device is disclosed. The semiconductor device includes: a first electrode, disposed over a first region of a substrate; and a conductive layer, disposed over the substrate, including a second electrode disposed above the first electrode, wherein the second electrode comprises a mesh main part having a plurality of openings, and a plurality of extending parts, wherein the extending parts are connected to the mesh main part at periphery of the openings and extend toward a surface of the first electrode.

Claims

1. A semiconductor device, comprising:

a first electrode, disposed over a first region of a substrate; and

a conductive layer, disposed over the substrate, including a second electrode disposed above the first electrode, wherein the second electrode comprises a mesh main part having a plurality of openings, and a plurality of extending parts, wherein the extending parts are connected to the mesh main part at periphery of the openings and extend toward a surface of the first electrode.

2. The semiconductor device as claimed in claim 1, wherein a profile of the second electrode comprises a plurality of dentations.

3. The semiconductor device as claimed in claim 1, wherein the mesh main part has a concave region disposed on the extending part.

4. The semiconductor device as claimed in claim 1, wherein the substrate further comprises a CMOS region, and the conductive layer further extends to the CMOS region.

5. The semiconductor device as claimed in claim 4, wherein thickness of the mesh main part is substantially the same to that of the conductive layer on the CMOS region.

6. The semiconductor device as claimed in claim 4, wherein thickness of the mesh main part is substantially less than that of the conductive layer on the CMOS region.