Integrated MOSFET and Schottky device
First Claim
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1. A power semiconductor device comprising:
- a semiconductor body of one conductivity;
a first source trench extending into said semiconductor body, and a second source trench extending into said semiconductor body, each said source trench including one sidewall adjacent a base region of another conductivity in said semiconductor body and another opposing sidewall adjacent a schottky region, and each said source trench further including a gate electrode spanning said base region, a gate oxide body, and a deep source field electrode that extends past said gate electrode to a depth below said gate electrode disposed within said source trench, said gate oxide body formed between said one sidewall and a side of said gate electrode facing said one sidewall, and said gate oxide body formed between said deep source field electrode and an opposite side of said gate electrode facing said deep source field electrode.
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Abstract
A power semiconductor device that includes a trench power MOSFET with deep source field electrodes and an integrated Schottky diode.
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Citations
20 Claims
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1. A power semiconductor device comprising:
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a semiconductor body of one conductivity; a first source trench extending into said semiconductor body, and a second source trench extending into said semiconductor body, each said source trench including one sidewall adjacent a base region of another conductivity in said semiconductor body and another opposing sidewall adjacent a schottky region, and each said source trench further including a gate electrode spanning said base region, a gate oxide body, and a deep source field electrode that extends past said gate electrode to a depth below said gate electrode disposed within said source trench, said gate oxide body formed between said one sidewall and a side of said gate electrode facing said one sidewall, and said gate oxide body formed between said deep source field electrode and an opposite side of said gate electrode facing said deep source field electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A power semiconductor device comprising:
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a semiconductor body of one conductivity; a plurality of source trenches extending into said semiconductor body, each said source trench including a gate electrode, a gate oxide body, and a deep source field electrode that extends past said gate electrode to a depth below said gate electrode disposed within said source trench, each said source trench further including one sidewall adjacent a first mesa in said semiconductor body and another opposing sidewall adjacent a second mesa in said semiconductor body; said first mesa comprising a base region of another conductivity and said second mesa comprising a schottky mesa, each said source trench being spaced from an adjacent said source trench by said schottky mesa; said gate oxide body in each said source trench being on respective facing sides of said deep source field electrode and said gate electrode. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A power semiconductor device comprising:
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a semiconductor body of one conductivity; a source trench extending into said semiconductor body including one sidewall adjacent a base region of another conductivity in said semiconductor body and another opposing sidewall adjacent a schottky region; said source trench further including a gate electrode spanning said base region, a gate oxide body, and a deep source field electrode that extends past said gate electrode to a depth below said gate electrode disposed within said source trench, said gate oxide body on respective facing sides of said deep source field electrode and said gate electrode. - View Dependent Claims (17, 18, 19, 20)
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Specification