Nonvolatile memory device containing carbon or nitrogen doped diode
First Claim
Patent Images
1. A nonvolatile memory device, comprising at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration,wherein the concentration of carbon in the silicon, germanium or silicon-germanium diode is lower than 1×
- 1021 cm−
3 and the concentration of nitrogen in the silicon, germanium or silicon-germanium diode is lower than 1×
1021 cm−
3; and
wherein the diode has a leakage current of less than 4×
10−
10 A at −
5.5 V in the high resistivity, reset state.
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Abstract
A nonvolatile memory device includes at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration.
65 Citations
22 Claims
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1. A nonvolatile memory device, comprising at least one nonvolatile memory cell which comprises a silicon, germanium or silicon-germanium diode which is doped with at least one of carbon or nitrogen in a concentration greater than an unavoidable impurity level concentration,
wherein the concentration of carbon in the silicon, germanium or silicon-germanium diode is lower than 1× - 1021 cm−
3 and the concentration of nitrogen in the silicon, germanium or silicon-germanium diode is lower than 1×
1021 cm−
3; andwherein the diode has a leakage current of less than 4×
10−
10 A at −
5.5 V in the high resistivity, reset state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- 1021 cm−
-
17. A nonvolatile memory device, comprising:
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at least one nonvolatile memory cell which comprises a silicon, germanium or silicon germanium p-i-n diode in which at least an intrinsic region and at least one of a p-type and a n-type regions are doped with at least one of nitrogen or carbon in a concentration greater than 1×
1017 cm−
3;wherein the concentration of carbon in the silicon, germanium or silicon-germanium p-i-n diode is lower than 1×
1021 cm−
3 and the concentration of nitrogen in the silicon, germanium or silicon-germanium p-i-n diode is lower than 1×
1021 cm−
3;wherein the diode has a leakage current of less than 4×
1010 A at −
5.5 V in the high resistivity, reset state; anda first electrode and a second electrode electrically contacting the at least one nonvolatile memory cell. - View Dependent Claims (18, 19, 20, 21, 22)
-
Specification