Reticle defect inspection with model-based thin line approaches

• US 8,103,086 B2
• Filed: 08/30/2010
• Issued: 01/24/2012
• Est. Priority Date: 01/11/2007
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Shi, Ruifang, Li, Xiaochun
• Primary Examiner(s): WERNER, BRIAN P
• Application Number:
  US12/871,821
• Publication Number:
  US 20110299759A1
• Time in Patent Office: 512 Days
• Field of Search: None
• US Class Current: 382/144
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

Provided are novel inspection methods and systems for inspecting photomasks to identify various defects using a model-based approach and information obtained from modeled images. Modeled or simulation images are generated directly from test or reference images. Some examples include aerial images that represent expected patterns projected by a lithography system on a substrate as well as photoresist images that represent expected resist patterns. Test images are first represented as a band limited mask pattern, which may include only linear terms for faster image processing. This pattern is then used to construct a modeled image, which in turn is used to construct a model-based feature map. This map serves as a base for inspecting the original test images to identify photomask defects and may include information that allows differentiating between various feature types based on their lithographic significance and other characteristics.

Claims

1. A method for inspecting a photomask to identify lithographically significant defects, the method comprising:

providing the photomask comprising one or more printable features and one or more non-printable features, the photomask configured to achieve lithographic transfer of the one or more printable features onto a substrate using a lithography system;

producing test light intensity images of the photomask using an inspection apparatus, the test light intensity images comprising a test transmission image and a test reflection image;

constructing a band limited mask pattern;

providing a model of the lithography system to be employed in the lithographic transfer;

constructing an aerial image of the band limited mask pattern by applying the model of the lithography system to the band limited mask pattern, wherein constructing the aerial image comprises separating the one or more non-printable features from the one or more printable features based on optical intensity distributions in the aerial image;

building a model-based feature map using the aerial image of the mask pattern,

wherein the model-based feature map differentiates between the one or more printable features and the one or more non-printable features; and

analyzing the test light intensity images using the model-based feature map to identify any lithographically significant defects.

2. The method of claim 1, further comprising obtaining reference light intensity images of the photomask, the reference light intensity images comprising a reference transmission image and a reference reflection image of a reference die.

3. The method of claim 2, wherein the band limited mask pattern is constructed using the reference light intensity images.

4. The method of claim 2, further comprising aligning the test light intensity images and the reference light intensity images with respect to each other.

5. The method of claim 4, wherein aligning comprises:

aligning the test transmission image with respect to the test reflection image;

aligning the reference transmission image with respect to the reference reflection image; and

aligning the reference transmission image with respect to the test transmission image or aligning the reference reflection image with respect to the test reflection image.

6. The method of claim 4, wherein analyzing the test light intensity images based on the model-based feature map comprises:

identifying portions of the aligned test light intensity images and corresponding portions of the aligned reference light intensity images; and

identifying any differences between the aligned test transmission image and the aligned reference transmission image and between the aligned test reflection image and the aligned reference reflection image for each identified portion.

7. The method of claim 6, wherein the identified portions containing the one or more printable features are inspected with higher sensitivity than the identified portions containing the one or more non-printable features.

8. The method of claim 6, wherein the model-based feature map comprises areas corresponding to the identified portions containing the one or more non-printable features.

9. The method of claim 1, wherein building the model-based feature map comprises identifying low light intensity areas and high light intensity areas of the aerial image.

10. The method of claim 1, wherein analyzing the test light intensity images using the model-based feature map comprises aligning the test light intensity images with the model-based feature map.

11. The method of claim 2, wherein the reference light intensity images are obtained from a database model of a printed pattern.

12. The method of claim 2, wherein the reference light intensity images are obtained from a reference die.

13. The method of claim 1, wherein the one or more non-printable features comprises Sub-Resolution Assist Features (SRAF).

14. The method of claim 1, wherein at least one of the non-printable features is larger than at least one of the printable features.

15. The method of claim 1, wherein constructing the aerial image comprises excluding the one or more non-printable features from the aerial image.

16. The method of claim 1, further comprising constructing a geometrical map based on the band limited mask pattern for classifying geometrical features into one or more geometrical feature types selected from the group consisting of edges, corners, and line ends.

17. The method of claim 16, further comprising using the geometrical map to classify the geometrical features during analyzing of the test images.

18. The method of claim 17, wherein analyzing the test images comprises applying different detection thresholds to at least two different geometrical feature types of the geometrical map.

19. The method of claim 1, wherein the model-based feature map comprises a plurality of areas each having a corresponding Mask Error Enhancement Factor (MEEF).

20. The method of claim 19, further comprising, during analyzing of the test images, automatically adjusting sensitivity levels for each image portion of the plurality of areas based on the corresponding MEEFs.

21. The method of claim 20, wherein a subset of the plurality of areas corresponding to the one or more printable features is analyzed with higher sensitivity than another subset of the plurality of areas corresponding to the one or more non-printable features.

22. The method of claim 1, further comprising providing one or more user-defined sensitivity levels for analyzing the test image.

23. The method of claim 22, wherein the one or more user-defined sensitivity levels corresponds to different areas of the model-based feature map.

24. The method of claim 1, wherein the band limited mask pattern comprises only linear terms.

25. The method of claim 1, wherein the band limited mask pattern comprises one or more quadratic terms.

26. The method of claim 1, wherein the model of the lithography system comprises at least the following parameters:

numerical apertures of the lithographic system and the inspection apparatus, wavelengths of the lithographic system and the inspection apparatus, and illumination conditions of the lithographic system and the inspection apparatus.

27. The method of claim 1, wherein constructing the aerial image comprises removing band limiting effects of the inspection apparatus.

28. A system for inspecting a photomask to identify lithographically significant defects comprising at least one memory and at least one processor configured to perform following operations:

producing test light intensity images of the photomask, the test light intensity images comprising a test transmission image and a test reflection image;

constructing a band limited mask pattern;

constructing an aerial image of the band limited mask pattern by applying a lithography system model to the band limited mask pattern, wherein constructing the aerial image comprises separating one or more non-printable features from one or more printable features based on optical intensity distributions in the aerial image;

building a model-based feature map using the aerial image of the mask pattern,

wherein the model-based feature map differentiates between the one or more printable features and the one or more non-printable features; and

analyzing the test light intensity images using the model-based feature map to identify any lithographically significant defects.