Wear leveling method and controller using the same
First Claim
1. A wear leveling method, for a multi level cell (MLC) NAND flash memory, wherein the MLC NAND flash memory comprises a first zone having a plurality of blocks and a second zone having a plurality of blocks, and each of the blocks in the first zone and the second zone comprises an upper page and a lower page, the wear leveling method comprising:
- determining whether to start a block swapping operation of a wear leveling process in the first zone of the MLC NAND flash memory according to a first start-up condition;
determining whether to start the block swapping operation in the second zone of the MLC NAND flash memory according to a second start-up condition, wherein the first start-up condition is different from the second start-up condition;
when the first start-up condition is met, performing the block swapping operation in the first zone; and
when the second start-up condition is met, performing the block swapping operation in the second zone,wherein the blocks in the first zone are accessed by using only the lower pages, and the blocks in the second zone are accessed by using both the lower pages and the upper pages.
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Accused Products
Abstract
A wear leveling method for a multi level cell (MLC) NAND flash memory is provided. The flash memory includes a first zone and a second zone respectively having a plurality of blocks, wherein each of the blocks includes an upper page and a lower page. The wear leveling method includes: respectively determining whether to start a block swapping operation of a wear leveling process in the first zone and the second zone of the flash memory according to different start-up conditions; and respectively performing the block swapping operation in the first zone and the second zone, wherein the blocks in the first zone are accessed by using only the lower pages, and the blocks in the second zone are accessed by using both the upper pages and the lower pages. Thereby, the lifespan of the flash memory is effectively prolonged and meaningless consumption of system resources is avoided.
13 Citations
35 Claims
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1. A wear leveling method, for a multi level cell (MLC) NAND flash memory, wherein the MLC NAND flash memory comprises a first zone having a plurality of blocks and a second zone having a plurality of blocks, and each of the blocks in the first zone and the second zone comprises an upper page and a lower page, the wear leveling method comprising:
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determining whether to start a block swapping operation of a wear leveling process in the first zone of the MLC NAND flash memory according to a first start-up condition; determining whether to start the block swapping operation in the second zone of the MLC NAND flash memory according to a second start-up condition, wherein the first start-up condition is different from the second start-up condition; when the first start-up condition is met, performing the block swapping operation in the first zone; and when the second start-up condition is met, performing the block swapping operation in the second zone, wherein the blocks in the first zone are accessed by using only the lower pages, and the blocks in the second zone are accessed by using both the lower pages and the upper pages. - View Dependent Claims (2, 3, 4, 5)
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6. A wear leveling method, for a MLC NAND flash memory, wherein the MLC NAND flash memory comprises a first zone having a plurality of blocks and a second zone having a plurality of blocks, and each of the blocks in the first zone and the second zone comprises an upper page and a lower page, the wear leveling method comprising:
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respectively performing a first wear leveling process and a second wear leveling process in the first zone and the second zone, wherein the first wear leveling process is different from the second wear leveling process, wherein the blocks in the first zone are accessed by using only the lower pages, and the blocks in the second zone are accessed by using both the lower pages and the upper pages. - View Dependent Claims (7, 8)
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9. A wear levelling method, for a flash memory module having a first flash memory and a second flash memory, the wear levelling method comprising:
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determining whether to start a block swapping operation of a wear leveling process in the first flash memory according to a first start-up condition; determining whether to start the block swapping operation in the second flash memory according to a second start-up condition, wherein the first start-up condition is different from the second start-up condition; when the first start-up condition is met, performing the block swapping operation in the first flash memory; and when the second start-up condition is met, performing the block swapping operation in the second flash memory, wherein the first flash memory is a single level cell (SLC) NAND flash memory, and the second flash memory is a MLC NAND flash memory. - View Dependent Claims (10, 11, 12, 13)
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14. A wear levelling method, for a flash memory module having a first flash memory and a second flash memory, the wear levelling method comprising:
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respectively executing a first wear leveling process and a second wear leveling process in the first flash memory and the second flash memory of the flash memory module, wherein the first wear leveling process is different from the second wear leveling process, wherein the first flash memory is a SLC NAND flash memory, and the second flash memory is a MLC NAND flash memory. - View Dependent Claims (15, 16)
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17. A controller, for a MLC NAND flash memory in a storage apparatus, wherein the MLC NAND flash memory comprises a first zone having a plurality of blocks and a second zone having a plurality of blocks, and each of the blocks in the first zone and the second zone comprises an upper page and a lower page, the controller comprising:
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a micro-processing unit; a flash memory interface, electrically connected the micro-processing unit for accessing the MLC NAND flash memory; a buffer memory, electrically connected the micro-processing unit for temporarily storing data; and a memory management module, electrically connected the micro-processing unit for determining whether to start a block swapping operation of a wear leveling process in the first zone of the MLC NAND flash memory according to a first start-up condition and determining whether to start the block swapping operation in the second zone of the MLC NAND flash memory according to a second start-up condition, wherein the first start-up condition is different from the second start-up condition, wherein when the first start-up condition is met, the memory management module performs the block swapping operation in the first zone, wherein when the second start-up condition is met, memory management module performs the block swapping operation in the second zone, wherein the blocks in the first zone are accessed by using only the lower pages, and the blocks in the second zone are accessed by using both the lower pages and the upper pages. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A controller, for a MLC NAND flash memory in a storage apparatus, wherein the MLC NAND flash memory comprises a first zone having a plurality of blocks and a second zone having a plurality of blocks, and each of the blocks in the first zone and the second zone comprises an upper page and a lower page, the controller comprising:
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a micro-processing unit; a flash memory interface, electrically connected the micro-processing unit for accessing the MLC NAND flash memory; a buffer memory, electrically connected the micro-processing unit for temporarily storing data; and a memory management module, electrically connected the micro-processing unit for respectively executing a first wear leveling process and a second wear leveling process in the first zone and the second zone, wherein the first wear leveling process is different from the second wear leveling process, wherein the blocks in the first zone are accessed by using only the lower pages, and the blocks in the second zone are accessed by using both the lower pages and the upper pages. - View Dependent Claims (24, 25, 26)
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27. A controller, for a flash memory module in a storage apparatus, wherein the flash memory module comprises a first flash memory and a second flash memory, the controller comprising:
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a micro-processing unit; a flash memory interface, electrically connected the micro-processing unit for accessing the flash memory module; a buffer memory, electrically connected the micro-processing unit for temporarily storing data; and a memory management module, electrically connected the micro-processing unit for determining whether to start a block swapping operation of a wear leveling process in the first flash memory according to a first start-up condition and determining whether to start the block swapping operation in the second flash memory of the flash memory module according to a second start-up condition, wherein the first start-up condition is different from the second start-up condition, wherein when the first start-up condition is met, the memory management module performs the block swapping operation in the first flash memory, wherein when the second start-up condition is met, the memory management module performs the block swapping operation in the second flash memory, wherein the first flash memory is a SLC NAND flash memory, and the second flash memory is a MLC NAND flash memory. - View Dependent Claims (28, 29, 30, 31)
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32. A controller, for a flash memory module in a storage apparatus, wherein the flash memory module comprises a first flash memory and a second flash memory, the controller comprising:
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a micro-processing unit; a flash memory interface, electrically connected the micro-processing unit for accessing the flash memory module; a buffer memory, electrically connected the micro-processing unit for temporarily storing data; and a memory management module, electrically connected the micro-processing unit for respectively executing a first wear leveling process and a second wear leveling process in the first flash memory and the second flash memory of the flash memory module, wherein the first wear leveling process is different from the second wear leveling process, wherein the first flash memory is a SLC NAND flash memory, and the second flash memory is a MLC NAND flash memory. - View Dependent Claims (33, 34, 35)
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Specification