Biased pulse DC reactive sputtering of oxide films
First Claim
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1. A method of depositing a film on a substrate, comprising:
- providing a process gas between a target and a substrate;
providing an RF bias at a bias frequency to the substrate;
providing pulsed DC power to the target so that a target voltage alternates between positive and negative voltages; and
filtering the pulsed DC power through a narrow band-rejection filter that rejects power in a narrow band around the bias frequency and passes power at frequencies above and below the bias frequency; and
wherein a material related to the target is deposited on the substrate by exposure of the substrate to the plasma;
wherein the RF biased power is a 2 MHz power supply and the bias frequency is 2 MHz;
and further whereinthe narrow band is 100 kHz and the narrow band-rejection filter is a filter that rejects power at 2 MHz and has a 100 kHz bandwidth.
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Abstract
A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present invention.
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22 Claims
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1. A method of depositing a film on a substrate, comprising:
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providing a process gas between a target and a substrate; providing an RF bias at a bias frequency to the substrate; providing pulsed DC power to the target so that a target voltage alternates between positive and negative voltages; and filtering the pulsed DC power through a narrow band-rejection filter that rejects power in a narrow band around the bias frequency and passes power at frequencies above and below the bias frequency; and wherein a material related to the target is deposited on the substrate by exposure of the substrate to the plasma; wherein the RF biased power is a 2 MHz power supply and the bias frequency is 2 MHz; and further wherein the narrow band is 100 kHz and the narrow band-rejection filter is a filter that rejects power at 2 MHz and has a 100 kHz bandwidth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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