Method of fabricating MEMS devices (such as IMod) comprising using a gas phase etchant to remove a layer
First Claim
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1. A method of fabricating a microelectromechanical structure (MEMS), the method comprising etching a deposited sacrificial layer with a non-plasma gas phase etchant, wherein the sacrificial layer comprises at least one of molybdenum, tungsten, or tantalum, wherein the MEMS comprises an interferometric modulator, further comprising forming a wall of the interferometric modulator on the deposited sacrificial layer prior to etching.
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Abstract
Improvements in an interferometric modulator that cavity defined by two walls.
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17 Claims
- 1. A method of fabricating a microelectromechanical structure (MEMS), the method comprising etching a deposited sacrificial layer with a non-plasma gas phase etchant, wherein the sacrificial layer comprises at least one of molybdenum, tungsten, or tantalum, wherein the MEMS comprises an interferometric modulator, further comprising forming a wall of the interferometric modulator on the deposited sacrificial layer prior to etching.
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4. A method of forming a movable microelectromechanical device comprising:
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disposing a sacrificial layer on a substrate, wherein the sacrificial layer comprises at least one of molybdenum, tungsten, or tantalum; disposing a microelectromechanical structure over the sacrificial layer and the substrate, the microelectromechanical structure comprising at least one thin film; and etching the sacrificial layer with a non-plasma gas phase etchant to release the microelectromechanical structure from the sacrificial layer, wherein the microelectromechanical device comprises an interferometric modulator and the microelectromechanical structure comprises a wall of the interferometric modulator. - View Dependent Claims (5, 6, 7, 11, 12, 13, 15, 17)
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Specification