In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
First Claim
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1. A method for growing a reduced defect density nonpolar or semipolar AlxGayIn(1-x-y)N template, comprising:
- (a) growing at least one nonpolar or semipolar AlxGayIn(1-x-y)N layer on top of at least one nanomask layer, which results in the nonpolar or semipolar AlxGayIn(1-x-y)N layer having a planar top surface that is a nonpolar or semipolar plane and a reduced defect density as compared to a nonpolar or semipolar AlxGayIn(1-x-y)N layer grown without the nanomask layer.
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Abstract
A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
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23 Claims
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1. A method for growing a reduced defect density nonpolar or semipolar AlxGayIn(1-x-y)N template, comprising:
(a) growing at least one nonpolar or semipolar AlxGayIn(1-x-y)N layer on top of at least one nanomask layer, which results in the nonpolar or semipolar AlxGayIn(1-x-y)N layer having a planar top surface that is a nonpolar or semipolar plane and a reduced defect density as compared to a nonpolar or semipolar AlxGayIn(1-x-y)N layer grown without the nanomask layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A device, comprising:
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(a) at least one nanomask layer; and (b) a nonpolar or semipolar AlxGayIn(1-x-y)N layer grown on top of the nanomask layer and having a planar top surface that is a nonpolar or semipolar plane and a reduced defect density as compared to a nonpolar or semipolar AlxGayIn(1-x-y)N grown without the nanomask layer. - View Dependent Claims (21, 22, 23)
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Specification