Photovoltaic cell with buffer zone

• US 8,106,293 B2
• Filed: 08/06/2009
• Issued: 01/31/2012
• Est. Priority Date: 08/14/2008
• Status: Active Grant

• Current Assignee: MH Gopower Co., Ltd.
• Original Assignee: MH Solar Company Ltd.
• Inventors: Sater, Bernard L.
• Primary Examiner(s): Michener, Jennifer
• Assistant Examiner(s): Mershon, Jayne
• Application Number:
  US12/536,987
• Publication Number:
  US 20100037944A1
• Time in Patent Office: 908 Days
• Field of Search: 136/255, 136/256, 136/261, 438/57
• US Class Current: 136/261
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/04 adapted as photovoltaic [PV] conversion devices testing thereof during manufacture H01L22/00; testing thereof after manufacture H02S50/10
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Systems and methods that provide a barrier for protection of active layers associated with a vertical multi junction (VMJ) photovoltaic cell. Buffer zone(s) in form of an inactive layer(s) arrangement safe guard the active layers against induced stress or strain resulting from external forces/thermal factors (e.g., welding). The buffer zone can be in form of a rim on a surface of an end layer of a cell unit, to act as a protective boundary for such active layer, and to further partially frame the VMJ cell for ease of handling and transportation.

Claims

1. A photovoltaic cell comprising:

a vertical multi junction (VMJ) photovoltaic cell that includes a plurality of integrally bonded cell units, each cell unit with a plurality of layers that form a PN junction(s); and

a buffer zone attached to an end layer of the VMJ photovoltaic cell and protrudes therefrom, wherein the buffer zone at least one of safe guards the VMJ photovoltaic cell from stress and strain, and further facilitates transportation of the VMJ photovoltaic cell.

2. The photovoltaic cell of claim 1, the buffer zone including substantially low resistivity material.

3. The photovoltaic cell of claim 1, the buffer zone implementable as a rim formation on a surface of an end layer of a cell unit.

4. The photovoltaic cell of claim 1, the buffer zone sandwiched between an electrical contact and an active layer of the VMJ photovoltaic cell.

5. The photovoltaic cell of claim 4, the buffer zone with thermal expansion characteristics that substantially match thermal characteristics of the active layer.

6. The photovoltaic cell of claim 4, the buffer layer includes substantially highly doped low resistivity silicon layer.

7. The photovoltaic cell of claim 4, each cell of the cell units includes a plurality of parallel semiconductor substrates that are stacked together.

8. The photovoltaic cell of claim 7, a substrate includes impurity doped semiconductor material that form a PN junction.

9. The photovoltaic cell of claim 8, a substrate further includes a “

built-in”

electrostatic drift field that facilitates minority carrier movement towards the PN junction.

10. A method of protecting active layers in a VMJ photovoltaic cell comprising:

forming a VMJ photovoltaic cell, which includes integrally bonding a plurality of cell units, each cell unit with a plurality of layers that form a PN junction(s); and

forming a buffer zone being attached to an end layer of the VMJ photovoltaic cell and protruding therefrom, wherein the buffer zone protects the VMJ photovoltaic cell from at least one of a stress, shear, moment and torsion induced on the VMJ photovoltaic cell, the buffer zone further facilitating transportation of the VMJ photovoltaic cell.

11. The method of claim 10 further comprising selecting thermal expansion coefficients for the buffer zone to be substantially same as that of the active layers.

12. The method of claim 10 further comprising implementing Miller indices of 111 for orientation of crystal planes associated with the buffer zone.

13. The method of claim 11 further comprising forming buffer zone with substantially low resistivity as part of end layers of the VMJ cell.

14. The method of claim 11 further comprising securing the VMJ cell during coating processes via a clamp on the buffer zones.

15. The method of claim 11, the integrally bonding act further comprising stacking cell units.

16. The method of claim 11 further comprising alloying silicon wafers and aluminum interfaces to form the VMJ cell.

17. The method of claim 11 further comprising employing impurity doped semiconductor material to form PN junctions in the VMJ cell.

18. The method of claim 11 further comprising incorporating ohmic contacts between outer layers of unit cells.

19. The method of claim 11 further comprising facilitating deposition of anti coating operation by the buffer zones.

20. A photovoltaic cell comprising:

means for forming a PN junction in a vertical multi junction (VMJ) photovoltaic cell; and

means for buffering the VMJ photovoltaic cell against induced stress or strain, the means for buffering is attached to an end layer of the VMJ photovoltaic cell and protrudes therefrom, the means for buffering further facilitates transportation of the VMJ photovoltaic cell.