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Semiconductor device with a superparaelectric gate insulator

  • US 8,106,434 B2
  • Filed: 12/13/2005
  • Issued: 01/31/2012
  • Est. Priority Date: 12/21/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a channel region of a semiconductor;

    a conductive gate electrode adjacent to the channel region; and

    a gate dielectric between the conductive gate electrode and the channel region, the gate dielectric being a superparaelectric gate dielectric, formed of a material that is a ferroelectric in bulk, and the gate dielectric including a dopant for hindering domain growth, the dopant not forming a solid solution in the gate dielectric material.

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