Trench MOSFET with deposited oxide
First Claim
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1. A power semiconductor device comprising:
- a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region;
a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalk and a bottom wall;
an oxide body disposed at the bottom of said trench;
a gate electrode formed over said oxide body;
gate oxide interposed between said sidewalls of said trench and said gate electrode, wherein said oxide body is less dense than said gate oxide;
a field relief trench, said field relief trench including a field oxide body having a recess, and a T-shaped electrode received at least partially in said recess;
at least one highly conductive region of said another conductivity formed directly on at least a sidewall of said field relief trench;
a source region adjacent said gate trench and said field relief trench, said source region situated between said gate trench and said field relief trench; and
a source electrode electrically connected to said T-shaped electrode and said source region.
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Abstract
A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body.
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Citations
16 Claims
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1. A power semiconductor device comprising:
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a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region; a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalk and a bottom wall; an oxide body disposed at the bottom of said trench; a gate electrode formed over said oxide body; gate oxide interposed between said sidewalls of said trench and said gate electrode, wherein said oxide body is less dense than said gate oxide; a field relief trench, said field relief trench including a field oxide body having a recess, and a T-shaped electrode received at least partially in said recess; at least one highly conductive region of said another conductivity formed directly on at least a sidewall of said field relief trench; a source region adjacent said gate trench and said field relief trench, said source region situated between said gate trench and said field relief trench; and a source electrode electrically connected to said T-shaped electrode and said source region. - View Dependent Claims (2, 3, 4, 5)
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6. A power semiconductor device comprising:
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a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region; a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalls and a bottom wall; an oxide body disposed at the bottom of said trench; a gate electrode formed over said oxide body; gate oxide interposed between said sidewalls of said trench and said gate electrode, wherein said oxide body is less dense than said gate oxide; a field relief trench having a field oxide body, and a field electrode disposed therein, and at least one highly conductive region of the same conductivity as said channel region formed directly on at least a sidewall of said field relief trench, and a power electrode into said field relief trench and electrically connected to said field electrode and said at least one highly conductive region inside said field relief trench.
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7. A power semiconductor device comprising:
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a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region; a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalls and a bottom wall; a gate electrode situated in said gate trench; a field relief trench, said field relief trench including a field electrode situated in said field relief trench; a highly conductive region of said one conductivity adjacent said gate trench and said field relief trench, said highly conductive region of said one conductivity situated between said gate trench and said field relief trench; another highly conductive region of said another conductivity formed directly on at least a sidewall of said field relief trench; and a power electrode electrically connected to said field electrode and said highly conductive region of said one conductivity. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification