Trench MOSFET with deposited oxide

• US 8,106,446 B2
• Filed: 04/03/2008
• Issued: 01/31/2012
• Est. Priority Date: 10/29/2004
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Montgomery, Robert
• Primary Examiner(s): GEBREMARIAM, SAMUEL A
• Application Number:
  US12/080,453
• Publication Number:
  US 20080185642A1
• Time in Patent Office: 1,398 Days
• Field of Search: 257328-330
• US Class Current: 257/330
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench type power semiconductor device which includes deposited rather than grown oxide in the trenches for the electrical isolation of electrodes disposed inside the trenches from the semiconductor body.

Claims

1. A power semiconductor device comprising:

a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region;

a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalk and a bottom wall;

an oxide body disposed at the bottom of said trench;

a gate electrode formed over said oxide body;

gate oxide interposed between said sidewalls of said trench and said gate electrode, wherein said oxide body is less dense than said gate oxide;

a field relief trench, said field relief trench including a field oxide body having a recess, and a T-shaped electrode received at least partially in said recess;

at least one highly conductive region of said another conductivity formed directly on at least a sidewall of said field relief trench;

a source region adjacent said gate trench and said field relief trench, said source region situated between said gate trench and said field relief trench; and

a source electrode electrically connected to said T-shaped electrode and said source region.

2. The power semiconductor device of claim 1, wherein said oxide body is comprised of TEOS.

3. The power semiconductor device of claim 1, wherein said oxide body is deposited and said gate oxide is grown.

4. The power semiconductor device of claim 1, further comprising a silicide body interposed between said semiconductor body and said source electrode.

5. The power semiconductor device of claim 1, further comprising an oxide cap disposed over said gate electrode.

6. A power semiconductor device comprising:

a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region;

a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalls and a bottom wall;

an oxide body disposed at the bottom of said trench;

a gate electrode formed over said oxide body;

gate oxide interposed between said sidewalls of said trench and said gate electrode, wherein said oxide body is less dense than said gate oxide;

a field relief trench having a field oxide body, and a field electrode disposed therein, and at least one highly conductive region of the same conductivity as said channel region formed directly on at least a sidewall of said field relief trench, and a power electrode into said field relief trench and electrically connected to said field electrode and said at least one highly conductive region inside said field relief trench.

7. A power semiconductor device comprising:

a semiconductor body having a drift region of one conductivity, and a channel region of another conductivity over said drift region;

a gate trench formed in said semiconductor body through at least said channel region, said gate trench including sidewalls and a bottom wall;

a gate electrode situated in said gate trench;

a field relief trench, said field relief trench including a field electrode situated in said field relief trench;

a highly conductive region of said one conductivity adjacent said gate trench and said field relief trench, said highly conductive region of said one conductivity situated between said gate trench and said field relief trench;

another highly conductive region of said another conductivity formed directly on at least a sidewall of said field relief trench; and

a power electrode electrically connected to said field electrode and said highly conductive region of said one conductivity.

8. The power semiconductor device of claim 7, wherein said field electrode comprises a T-shaped electrode received at least partially in a recess formed in a field oxide body situated in said field relief trench.

9. The power semiconductor device of claim 7, further comprising a silicide body interposed between said highly conductive region of said one conductivity and said power electrode.

10. The power semiconductor device of claim 7, further comprising a silicide body interposed between said field electrode and said power electrode.

11. The power semiconductor device of claim 7, wherein said highly conductive region of said one conductivity is a source region of said power semiconductor device, and said power electrode is a source electrode.

12. The power semiconductor device of claim 7, further comprising at least one highly conductive region of said another conductivity formed along a sidewall of said field relief trench, said power electrode being further electrically connected to said at least one highly conductive region of said another conductivity.

13. The power semiconductor device of claim 7, further comprising an oxide cap disposed over said gate electrode.

14. The power semiconductor device of claim 7, further comprising:

an oxide body disposed at the bottom of said gate trench, said oxide body situated beneath said gate electrode; and

a gate oxide interposed between said sidewalls of said gate trench and said gate electrode;

said oxide body being less dense than said gate oxide.

15. The power semiconductor device of claim 14, wherein said oxide body comprises TEOS.

16. The power semiconductor device of claim 14, wherein said oxide body is deposited and said gate oxide is grown.