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Method for manufacturing field-effect transistor

  • US 8,110,436 B2
  • Filed: 09/25/2008
  • Issued: 02/07/2012
  • Est. Priority Date: 09/26/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a field-effect transistor including at least a source electrode, a drain electrode, an oxide semiconductor layer, a steam permeable insulating layer, and a gate electrode all formed on a substrate, the method comprising:

  • after forming the steam permeable insulating layer on the oxide semiconductor layer, increasing electrical conductivity of the oxide semiconductor layer by annealing in an atmosphere containing moisture, wherein steam pressure during annealing is higher than saturated vapor pressure in the atmosphere at an annealing temperature.

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