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Graded dielectric layers

  • US 8,110,469 B2
  • Filed: 08/30/2005
  • Issued: 02/07/2012
  • Est. Priority Date: 08/30/2005
  • Status: Active Grant
First Claim
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1. A method comprising:

  • controlling a doping profile of a dopant in a metal oxide across the metal oxide to form a graded metal oxide in an integrated circuit, the metal oxide having a top surface and a bottom surface, such that the graded metal oxide has varying amounts of the dopant across the graded metal oxide between the top and bottom surfaces with concentrations of the dopant at the top surface and at the bottom surface being greater than a concentration of the dopant in a center of the metal oxide between the top surface and the bottom surface, the graded metal oxide formed substantially as monolayers across the graded metal oxide having a base metal oxide composition that is doped and not altered into an undoped base composition that includes the dopant.

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