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Miscut semipolar optoelectronic device

  • US 8,110,482 B2
  • Filed: 02/22/2010
  • Issued: 02/07/2012
  • Est. Priority Date: 01/20/2006
  • Status: Active Grant
First Claim
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1. A semiconductor film, comprising:

  • a semipolar nitride semiconductor film deposited on a miscut surface of a substrate, wherein a top surface of the semipolar nitride semiconductor film is more than 10 microns wide and is substantially parallel to the miscut surface of the substrate.

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