Cooling of substrate using interposer channels

• US 8,110,746 B2
• Filed: 09/18/2008
• Issued: 02/07/2012
• Est. Priority Date: 09/02/2004
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Lu, Minhua, Mok, Lawrence S.
• Primary Examiner(s): Zand, Kambiz
• Assistant Examiner(s): Getachew, Abiy
• Application Number:
  US12/233,061
• Publication Number:
  US 20090008130A1
• Time in Patent Office: 1,237 Days
• Field of Search: 361700-710
• US Class Current: 174/252
• CPC Class Codes: F28D 15/0266 with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers F28D15/043 takes precedence
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 23/427 Cooling by change of state, e.g. use of heat pipes by liquefied gas H01L23/445
• CPC Class Codes: H01L 23/433 Auxiliary members in containers characterised by their shape, e.g. pistons
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: Y10T 29/49126 Assembling bases
• CPC Class Codes: Y10T 29/49128 Assembling formed circuit to base
• CPC Class Codes: Y10T 29/4913 Assembling to base an electrical component, e.g., capacitor, etc.
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base
• CPC Class Codes: Y10T 29/49204 Contact or terminal manufacturing

Abstract

A structure. The structure includes an interposer adapted to be interposed between a heat source and a heat sink and to transfer heat from the heat source to the heat sink. The interposer includes an enclosure that encloses a cavity. The enclosure is made of a thermally conductive material. The cavity includes a thermally conductive foam material. The foam material includes pores and includes at least one serpentine channel. Each serpentine channel has at least two contiguously connected channel segments. Each serpentine channel independently forms a closed loop or an open ended loop. The foam material is adapted to be soaked by a liquid filling the pores. Each serpentine channel is adapted to be partially filled with a fluid that serves to transfer heat from the heat source to the heat sink.

Claims

1. A structure, comprising an interposer adapted to be interposed between a heat source and a heat sink and to transfer heat from the heat source to the heat sink, said interposer comprising an enclosure that encloses a cavity, said enclosure being made of a thermally conductive material, said cavity comprising a thermally conductive foam material therein, said foam material comprising pores and comprising at least one serpentine channel, each serpentine channel having a plurality of contiguously connected channel segments, each serpentine channel independently forming a closed loop or an open ended loop, said foam material having a characteristic of being soakable by a liquid filling said pores, each serpentine channel having a characteristic of being partially fillable with a fluid that serves to transfer heat from the heat source to the heat sink, wherein the channel segments of a first serpentine channel of the at least one serpentine channel are disposed at a same planar level within the interposer, and wherein the planar level is perpendicular to a thickness direction of the interposer.

2. The structure of claim 1, wherein the at least one serpentine channel consists of one serpentine channel.

3. The structure of claim 1, wherein the at least one serpentine channel consists of a plurality of serpentine channels.

4. The structure of claim 1, wherein the plurality of channel segments of a first serpentine channel of the at least one serpentine channel comprises a first set of contiguously connected channel segments and a second set of contiguously connected channel segments, wherein the first and second set of channel segments are respectively disposed at a first and second planar level of the interposer, wherein the first and second planar levels are each perpendicular to a thickness direction of the interposer and are not coplanar.

5. The structure of claim 4, wherein corresponding channel segments of the first and second set of channel segments are mutually parallel.

6. The structure of claim 5, wherein the corresponding channel segments of the first and second set of channel segments are mutually aligned with respect to the thickness direction.

7. The structure of claim 5, wherein the corresponding channel segments of the first and second set of channel segments are mutually offset with respect to the thickness direction.

8. The structure of claim 4, wherein the first set of channel segments are perpendicular to the second set of channel segments.

9. The structure of claim 1, wherein a channel segment of the plurality of channel segments of a first serpentine channel of the at least one serpentine channel is in direct mechanical and thermal contact with a side of the enclosure.

10. The structure of claim 1, wherein an end surface of a first serpentine channel of the at least one serpentine channel is bounded by a side of the enclosure and is in direct mechanical and thermal contact with the side of the enclosure.

11. The structure of claim 1, wherein an end surface of a first serpentine channel of the at least one serpentine channel is bounded by the foam material and is in direct mechanical and thermal contact with the foam material.

12. The structure of claim 1, wherein the plurality channel segments of a first serpentine channel of the at least one serpentine channel form a closed loop, wherein the plurality of channel segments of the first serpentine channel comprise a first set of channel segments alternating with a second set of channel segments, wherein the channel segments of the first and second sets of channel segments are each oriented in a direction, wherein the channel segments of the first set of channel segments each have a constant cross-sectional area with respect to the direction, and wherein the channel segments of the second set of channel segments are tapered with respect to the direction.

13. The structure of claim 1, wherein the foam material comprises a graphite foam whose pores are filled with the liquid.

14. The structure of claim 1, further comprising a semiconductor chip and the heat sink, wherein the interposer is interposed between the heat source and the heat sink, wherein a first side of the semiconductor chip is in mechanical and thermal contact with the interposer, wherein the semiconductor chip comprises active electronic devices on a second side of the semiconductor chip that is opposite the first side of the semiconductor chip, and wherein the heat source comprises the active electronic devices.

15. The method of claim 14, wherein a coefficient of thermal expansion (CTE) of the thermally conductive material of the enclosure and a CTE of the semiconductor chip are substantially equal to each other to an extent sufficient as to substantially prevent or mitigate thermal stresses in the semiconductor chip as the semiconductor chip heats up or cools down.

16. The method of claim 13, wherein the liquid filling the pores of the graphite foam is confined within the graphite foam by capillary force and surface tension.

17. The method of claim 1, wherein the at least one serpentine channel is embedded within the foam material that is contained within the cavity.