Method and apparatus for performing model-based OPC for pattern decomposed features

• US 8,111,921 B2
• Filed: 09/13/2007
• Issued: 02/07/2012
• Est. Priority Date: 09/13/2006
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools B.V. (ASML Holding NV)
• Inventors: Hsu, Duan-Fu Stephen, Park, Jung Chul, Van Den Broeke, Douglas, Chen, Jang Fung
• Primary Examiner(s): Tabatabai, Abolfazl
• Application Number:
  US11/898,646
• Publication Number:
  US 20080069432A1
• Time in Patent Office: 1,608 Days
• Field of Search: 382/145, 382/159, 382/165, 382/170, 382/181, 382/309, 382/194, 703/14, 715/52, 716/52, 716/53, 716/55, 716/106, 725/19, 700/135, 706/20, 706/48
• US Class Current: 382/181
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475
• CPC Class Codes: G03F 7/70475 Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
• CPC Class Codes: G06T 7/0004 Industrial image inspection

Abstract

A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.

Claims

1. A method for decomposing a target circuit pattern containing features to be printed on a wafer, into multiple patterns, comprising the steps of:

separating said features to be printed into a first pattern and a second pattern;

performing a first optical proximity correction process on said first pattern and said second pattern;

determining an imaging performance of said first pattern and said second pattern;

determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;

utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;

utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern; and

applying a second optical proximity correction process to said modified first pattern and said modified second pattern.

2. A method for decomposing a target circuit pattern according to claim 1, wherein said features are separated into said first pattern and said second pattern utilizing a rule-based decomposition process.

3. A method for decomposing a target circuit pattern according to claim 1, wherein said features are separated into said first pattern and said second pattern utilizing a model-based decomposition process.

4. A method for decomposing a target circuit pattern according to claim 1, wherein said first optical proximity correction process and said second optical proximity correction process are the same processes.

5. A method for decomposing a target circuit pattern according to claim 4, wherein said first optical proximity correction process and said second optical proximity correction utilizes a rule-based correction process.

6. A method for decomposing a target circuit pattern according to claim 4, wherein said first optical proximity correction process and said second optical proximity correction utilize a model-based correction process.

7. A method for decomposing a target circuit pattern according to claim 1, wherein said first error and said second error are determined in said stitching areas associated with said first pattern and said second pattern.

8. A computer readable storage medium storing a computer program for decomposing a target circuit pattern containing features to be printed on a wafer, into multiple patterns, when executed, causing a computer to perform the steps of:

separating said features to be printed into a first pattern and a second pattern;

performing a first optical proximity correction process on said first pattern and said second pattern;

determining an imaging performance of said first pattern and said second pattern;

determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;

utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;

utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern; and

applying a second optical proximity correction process to said modified first pattern and said modified second pattern.

9. The computer readable storage medium according to claim 8, wherein said features are separated into said first pattern and said second pattern utilizing a rule-based decomposition process.

10. The computer readable storage medium according to claim 8, wherein said features are separated into said first pattern and said second pattern utilizing a model-based decomposition process.

11. The computer readable storage medium according to claim 8, wherein said first optical proximity correction process and said second optical proximity correction process are the same processes.

12. The computer readable storage medium according to claim 11, wherein said first optical proximity correction process and said second optical proximity correction utilizes a rule-based correction process.

13. The computer readable storage medium according to claim 11, wherein said first optical proximity correction process and said second optical proximity correction utilize a model-based correction process.

14. The computer readable storage medium according to claim 8, wherein said first error and said second error are determined in said stitching areas associated with said first pattern and said second pattern.

15. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using an imaging system;

(c) using patterns on masks to endow the projection beam with patterns in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,

wherein in step (c), providing a pattern on a mask includes the steps of;

separating features to be printed into a first pattern and a second pattern;

performing a first optical proximity correction process on said first pattern and said second pattern;

determining an imaging performance of said first pattern and said second pattern;

determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;

utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;

utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern; and

applying a second optical proximity correction process to said modified first pattern and said modified second pattern.

16. A method for generating masks to be utilized in a photolithography process, said method comprising the steps of:

decomposing a target circuit pattern containing features to be printed on a wafer, into multiple patterns, by separating said features to be printed into a first pattern and a second pattern;

performing a first optical proximity correction process on said first pattern and said second pattern;

determining an imaging performance of said first pattern and said second pattern;

determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;

utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;

utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern;

applying a second optical proximity correction process to said modified first pattern and said modified second pattern; and

generating a first mask corresponding to said modified first pattern after said second optical proximity correction process, and a second mask corresponding to said modified second pattern after said second optical proximity correction process.