×

Semiconductor light emitting device having textured structure and method of manufacturing the same

  • US 8,114,691 B2
  • Filed: 12/04/2009
  • Issued: 02/14/2012
  • Est. Priority Date: 12/08/2004
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:

  • forming a first semiconductor layer on a substrate;

    forming the textured structure having a plurality of holes on the first semiconductor layer in defect regions by etching the first semiconductor layer, each hole exposing a portion of the substrate;

    forming an intermediate layer on the exposed portions of the substrate between the textured structures of the first semiconductor layer by filling the plurality of holes with light-transmissive material; and

    sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer and the intermediate layer,wherein the first semiconductor layer has an upper surface that is substantially coplanar with the light transmissive material of the intermediate layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×