Semiconductor light emitting device having textured structure and method of manufacturing the same
First Claim
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1. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
- forming a first semiconductor layer on a substrate;
forming the textured structure having a plurality of holes on the first semiconductor layer in defect regions by etching the first semiconductor layer, each hole exposing a portion of the substrate;
forming an intermediate layer on the exposed portions of the substrate between the textured structures of the first semiconductor layer by filling the plurality of holes with light-transmissive material; and
sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer and the intermediate layer,wherein the first semiconductor layer has an upper surface that is substantially coplanar with the light transmissive material of the intermediate layer.
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Abstract
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
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Citations
12 Claims
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1. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
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forming a first semiconductor layer on a substrate; forming the textured structure having a plurality of holes on the first semiconductor layer in defect regions by etching the first semiconductor layer, each hole exposing a portion of the substrate; forming an intermediate layer on the exposed portions of the substrate between the textured structures of the first semiconductor layer by filling the plurality of holes with light-transmissive material; and sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer and the intermediate layer, wherein the first semiconductor layer has an upper surface that is substantially coplanar with the light transmissive material of the intermediate layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a semiconductor light emitting diode having a textured structure, the method comprising:
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forming a first semiconductor layer on a sapphire substrate; exposing a portion of the sapphire substrate while forming the textured structure by etching the first semiconductor layer; forming an intermediate layer on the exposed substrate between the textured structures of the first semiconductor layer; and sequentially forming a second semiconductor layer, an active layer, and a third semiconductor layer on the first semiconductor layer and the intermediate layer, wherein the step of exposing a portion of the sapphire substrate comprises; performing a first etching to form etch pits on a surface of the first semiconductor layer; and performing a second etching to expose a surface of the substrate by etching the etch pits of the first semiconductor layer. - View Dependent Claims (11, 12)
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Specification